Spin-valve giant magnetoresistive films with antiferromagnetic Ir-Mn layers

Hiromi Niu Fuke, Kazuhiro Saito, Yuzo Kamiguchi, Hitoshi Iwasaki, Masashi Sahashi

Research output: Contribution to journalArticlepeer-review

136 Citations (Scopus)

Abstract

We succeeded in developing CoFe spin valves with an antiferromagnetic Ir-Mn film. Ir-Mn single-layer films and spin valves of Ta(5 nm)/Ir-Mn(8 or 9 nm)/Co90Fe10(x nm)/Cu(3 nm)/ Co90Fe10(S nm)/NiFe(2 nm)/CoZrNb(10 nm)/(or = 2, 2.3, 2.6 nm). prepared by the sputtering method, showed the crystal structure of a fcc (111) preferred orientation. As-deposited CoFe spin valves with Ir-Mn exhibited an interfacial exchange coupling energy of J = 0.192 erg/cm2 (Hua ∼ 640 Oe at tCoFe = 2 nm), that was the highest ever reported for as-deposited antiferromagnetic films, such as NiO, NiMn, and FeMn. Furthermore, CoFe spin valves with Ir-Mn exhibited a higher blocking temperature of 260 °C, and a higher MR ratio of 6.37% than the spin valves with FeMn film. After annealing, the MR ratio increased to 7.82%. On the other hand, the Hua decreased about 100 Oe after annealing. The Hua-T curve was, however, improved and the Hua at 100 °C increased to 400 Oe. The decrease in Hua was not observed after second annealing and seems to be stabilized by first annealing.

Original languageEnglish
Pages (from-to)4004-4006
Number of pages3
JournalJournal of Applied Physics
Volume81
Issue number8 PART 2A
Publication statusPublished - 1997 Apr 15

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Spin-valve giant magnetoresistive films with antiferromagnetic Ir-Mn layers'. Together they form a unique fingerprint.

Cite this