Spin valve effect in magnetically doped nanotube-based transistors

Keivan Esfarjani, Z. Chen, A. A. Farajian, Y. Kawazoe

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Transport properties of doped nanotubes double junctions forming a nanotransistor are investigated within the tight binding formalism. The effect of magnetic dopants on the electronic structure is studied by using ab initio methods. The effects of doping, gate length and gate-source hopping have been considered. It is found that in addition to the importance of rotational symmetry in determining transport properties, large gains can be achieved for semiconducting doped tubes.

Original languageEnglish
Title of host publicationNanonetwork Materials
Subtitle of host publicationFullerenes, Nanotubes, and Related Systems
EditorsTsuneya Ando, Yoshihiro Iwasawa, Koichi Kikuchi, Yahachi Saito, Susumu Saito, Mototada Kobayashi
PublisherAmerican Institute of Physics Inc.
Pages253-256
Number of pages4
ISBN (Electronic)0735400326, 9780735400320
DOIs
Publication statusPublished - 2001 Oct 16
EventInternational Symposium on Nanonetwork Materials: Fullerenes, Nanotubes, and Related Systems 2001 - Kamakura, Japan
Duration: 2001 Jan 152001 Jan 18

Publication series

NameAIP Conference Proceedings
Volume590
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

OtherInternational Symposium on Nanonetwork Materials: Fullerenes, Nanotubes, and Related Systems 2001
CountryJapan
CityKamakura
Period01/1/1501/1/18

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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