Spin-tunneling time in a hybrid semimagnetic/semiconductor heterostructure with a single paramagnetic layer

Yong Guo, Bin Wang, Bing Lin Gu, Yoshiyuki Kawazoe

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

We investigate spin-dependent tunneling times in a hybrid semimagnetic/semiconductor heterostructure with a single paramagnetic layer under the influence of both electric and magnetic fields. We find that the tunneling times for electrons strongly depend on the incident energy, the magnitude of the external fields, and on their spin orientation. The results indicate that the tunneling time for spin-up electrons can be longer than that for spin-down ones by up to several orders of magnitude. This implies that tunneling for spin-up and spin-down electrons are separated in time within the same heterostructure.

Original languageEnglish
Pages (from-to)453-458
Number of pages6
JournalPhysics Letters, Section A: General, Atomic and Solid State Physics
Volume291
Issue number6
DOIs
Publication statusPublished - 2001 Dec 17

Keywords

  • Semimagnetic semiconductor
  • Spin polarization
  • Spin separation
  • Spintronics
  • Tunneling time

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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