Abstract
A theory of spin-transport in hybrid normal metal-ferromagnetic electronic circuits is developed, taking into account non-collinear spin-accumulation. Spin-transport through resistive elements is described by 4 conductance parameters. Microscopic expression for these conductances are derived in terms of scattering matrices and explicitly calculated for simple models. The circuit theory is applied to 2-terminal and 3-terminal devices attached to ferromagnetic reservoirs.
Original language | English |
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Pages (from-to) | 99-110 |
Number of pages | 12 |
Journal | European Physical Journal B |
Volume | 22 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2001 Jul 1 |
Externally published | Yes |
Keywords
- 72.10.-d Theory of electronic transport; scattering mechanisms
- 72.10.Bg General formulation of transport theory
- 75.70.-i Magnetic properties of thin films, surfaces, and interfaces
- 75.70.Pa Giant magnetoresistance
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics