Spin transistor using magnetic tunnel junctions with half-metallic Co 2MnSi Heusler alloy electrodes

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Abstract

We fabricated a spin transistor structure that consisted of two magnetic tunnel junctions with half-metallic Co2MnSi electrodes. Transient responses were observed by applying pulsing gate voltage. Output currents were controlled by both the source-drain and gate voltage and magnetic configuration of the Co2MnSi. The drain current increased around 3000 times at a source-drain voltage of 0.01 V and anti-parallel magnetic configuration, when a gate voltage of 1 V peak-to-peak was applied. In addition, the maximum magnetocurrent ratios were 215% at 6 K. Expected operation properties are observed in our proposed spin transistor.

Original languageEnglish
Article number132513
JournalApplied Physics Letters
Volume99
Issue number13
DOIs
Publication statusPublished - 2011 Sep 26

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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