Spin transistor based on double tunnel junctions using half-metallic Co2MnSi electrodes

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6 Citations (Scopus)

Abstract

Magnetic tunnel junctions (MTJs) using half-metallic Heusler alloy Co 2MnSi electrodes show large tunnel magnetoresistance (TMR) ratio and large bias voltage dependence of tunnel conductance. We propose a spin transistor utilizing half-metallic characteristics of Co2MnSi. Fundamental structure is double tunnel junctions using Co2MnSi electrodes with gate electrode. The bias voltage dependence of tunnel conductance for the fabricated device has shown half-metallic characteristic of Co2MnSi electrodes. The TMR ratio has decreased with increasing gate voltage. This is the first observation of modulating the tunnel conductance by applying an external voltage in spin transistor using Co2MnSi.

Original languageEnglish
Article number052019
JournalJournal of Physics: Conference Series
Volume200
Issue numberSECTION 5
DOIs
Publication statusPublished - 2010

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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