TY - JOUR
T1 - Spin-transfer torque RAM technology
T2 - Review and prospect
AU - Kawahara, T.
AU - Ito, K.
AU - Takemura, R.
AU - Ohno, H.
N1 - Funding Information:
This work was supported in part by the High-Performance Low-Power Consumption Spin Devices and Storage Systems program (headed by Professor Hideo Ohno of Tohoku University) under Research and Development for Next-Generation Information Technology of MEXT, and also by the Japan Society for the Promotion of Science (JSPS) through its Funding Program for World-Leading Innovative R&D on Science and Technology (FIRST Program).
PY - 2012/4
Y1 - 2012/4
N2 - Non-volatile RAM (NV-RAM) enables instant-on/off computing, which drastically reduces power consumption. One of the most promising candidates for NV-RAM technology is the spin-transfer torque RAM (SPRAM) based on magnetic tunnel junction (MTJ) device technology. This paper reviews the development of MTJ device technology and formulates considerations regarding its memory application, including SPRAM memory cell structure and operation, write voltage limitation, and thermal stability. At the circuit level, a disruptive read operation for future large integration scale is described. A 4F 2 memory cell and a multi-bit cell approach are also presented. Finally, the potential value of instant-on/off computing through NV-RAM and its impact are explored.
AB - Non-volatile RAM (NV-RAM) enables instant-on/off computing, which drastically reduces power consumption. One of the most promising candidates for NV-RAM technology is the spin-transfer torque RAM (SPRAM) based on magnetic tunnel junction (MTJ) device technology. This paper reviews the development of MTJ device technology and formulates considerations regarding its memory application, including SPRAM memory cell structure and operation, write voltage limitation, and thermal stability. At the circuit level, a disruptive read operation for future large integration scale is described. A 4F 2 memory cell and a multi-bit cell approach are also presented. Finally, the potential value of instant-on/off computing through NV-RAM and its impact are explored.
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U2 - 10.1016/j.microrel.2011.09.028
DO - 10.1016/j.microrel.2011.09.028
M3 - Review article
AN - SCOPUS:84857793796
SN - 0026-2714
VL - 52
SP - 613
EP - 627
JO - Microelectronics Reliability
JF - Microelectronics Reliability
IS - 4
ER -