Spin transfer switching of current-perpendicular-to-plane giant magnetoresistance with various Gd-Fe free-layer compositions

K. Aoshima, Y. Hashimoto, N. Funabashi, K. MacHida, K. Kuga, H. Kikuchi, N. Shimidzu, T. Ishibashi

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9 Citations (Scopus)

Abstract

We have investigated the spin transfer switching (STS) properties of current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) devices with various compositions of Gd-Fe free-layers for magneto-optical light modulator applications, whereby iron (Fe) concentrations are varied from 72.5 to 80.3 at. Switching current densities decreased dramatically with increases in Fe concentration within the Gd-Fe compound. The switching current density (J c0) for a device with composition Gd Fe 80.3 at. was 20.5 MA/cm 2, which is more than eight times smaller than that for devices with composition Gd Fe 72.5at.. This reduction in switching current can be attributed to a decrease in the effective perpendicular anisotropy in Fe-richer Gd-Fe compounds.

Original languageEnglish
Article number07C911
JournalJournal of Applied Physics
Volume111
Issue number7
DOIs
Publication statusPublished - 2012 Apr 1
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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