We have fabricated the SyF structure with both high annealing stability and strong interlayer exchange coupling and investigated tunnelling magnetoresistance (TMR) and spin-transfer switching properties of magnetic tunnel junctions (MTJs) with developed SyF free layer. The fabricated SyF with structure of Ta/Ru/CoFe/Ru/CoFeB possessed high annealing stability of 400°C and strong interlayer exchange coupling. Consequently, a large TMR ratio of 122% has been observed after annealing at high temperature of 350°C. In addition, we have successfully observed spin-transfer switching by the net current density of 14 MA/cm2 and the large thermal stability factor of 62.
ASJC Scopus subject areas
- Physics and Astronomy(all)