Spin-transfer switching in magnetic tunnel junctions with synthetic ferri-magnetic free layer

M. Nishimura, M. Oogane, H. Naganuma, N. Inami, S. Ikeda, H. Ohno, Y. Ando

Research output: Contribution to journalConference articlepeer-review

2 Citations (Scopus)

Abstract

We have fabricated the SyF structure with both high annealing stability and strong interlayer exchange coupling and investigated tunnelling magnetoresistance (TMR) and spin-transfer switching properties of magnetic tunnel junctions (MTJs) with developed SyF free layer. The fabricated SyF with structure of Ta/Ru/CoFe/Ru/CoFeB possessed high annealing stability of 400°C and strong interlayer exchange coupling. Consequently, a large TMR ratio of 122% has been observed after annealing at high temperature of 350°C. In addition, we have successfully observed spin-transfer switching by the net current density of 14 MA/cm2 and the large thermal stability factor of 62.

Original languageEnglish
Article number052018
JournalJournal of Physics: Conference Series
Volume200
Issue numberSECTION 5
DOIs
Publication statusPublished - 2010

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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