Spin-torque transistor

Gerrit E.W. Bauer, Arne Brataas, Yaroslav Tserkovnyak, Bart J. Van Wees

Research output: Contribution to journalArticle

46 Citations (Scopus)


A robust magnetoelectronic three-terminal device which controls charge currents via the spin-transfer effect was proposed. The lower part of this device consisted of source and drain contacts made from high-coercivity metallic magnets with antiparallel magnetizations. It was found that the device can be fabricated from metallic thin films in a lateral geometry.

Original languageEnglish
Pages (from-to)3928-3930
Number of pages3
JournalApplied Physics Letters
Issue number22
Publication statusPublished - 2003 Jun 2

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Bauer, G. E. W., Brataas, A., Tserkovnyak, Y., & Van Wees, B. J. (2003). Spin-torque transistor. Applied Physics Letters, 82(22), 3928-3930. https://doi.org/10.1063/1.1579122