Spin-torque transistor

Gerrit E.W. Bauer; Arne Brataas; Yaroslav Tserkovnyak; Bart J. Van Wees

doi:10.1063/1.1579122

Spin-torque transistor

Gerrit E.W. Bauer, Arne Brataas, Yaroslav Tserkovnyak, Bart J. Van Wees

Research output: Contribution to journal › Article

46 Citations (Scopus)

Abstract

A robust magnetoelectronic three-terminal device which controls charge currents via the spin-transfer effect was proposed. The lower part of this device consisted of source and drain contacts made from high-coercivity metallic magnets with antiparallel magnetizations. It was found that the device can be fabricated from metallic thin films in a lateral geometry.

Original language	English
Pages (from-to)	3928-3930
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	22
DOIs	https://doi.org/10.1063/1.1579122
Publication status	Published - 2003 Jun 2

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1579122

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Bauer, G. E. W., Brataas, A., Tserkovnyak, Y., & Van Wees, B. J. (2003). Spin-torque transistor. Applied Physics Letters, 82(22), 3928-3930. https://doi.org/10.1063/1.1579122

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