Spin-torque transistor

Gerrit E.W. Bauer; Arne Brataas; Yaroslav Tserkovnyak; Bart J. Van Wees

doi:10.1063/1.1579122

Spin-torque transistor

Gerrit E.W. Bauer, Arne Brataas, Yaroslav Tserkovnyak, Bart J. Van Wees

Research output: Contribution to journal › Article › peer-review

50 Citations (Scopus)

Abstract

A robust magnetoelectronic three-terminal device which controls charge currents via the spin-transfer effect was proposed. The lower part of this device consisted of source and drain contacts made from high-coercivity metallic magnets with antiparallel magnetizations. It was found that the device can be fabricated from metallic thin films in a lateral geometry.

Original language	English
Pages (from-to)	3928-3930
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	22
DOIs	https://doi.org/10.1063/1.1579122
Publication status	Published - 2003 Jun 2
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1579122

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title = "Spin-torque transistor",

abstract = "A robust magnetoelectronic three-terminal device which controls charge currents via the spin-transfer effect was proposed. The lower part of this device consisted of source and drain contacts made from high-coercivity metallic magnets with antiparallel magnetizations. It was found that the device can be fabricated from metallic thin films in a lateral geometry.",

author = "Bauer, {Gerrit E.W.} and Arne Brataas and Yaroslav Tserkovnyak and {Van Wees}, {Bart J.}",

year = "2003",

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doi = "10.1063/1.1579122",

language = "English",

volume = "82",

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journal = "Applied Physics Letters",

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AU - Bauer, Gerrit E.W.

AU - Brataas, Arne

AU - Tserkovnyak, Yaroslav

AU - Van Wees, Bart J.

PY - 2003/6/2

Y1 - 2003/6/2

N2 - A robust magnetoelectronic three-terminal device which controls charge currents via the spin-transfer effect was proposed. The lower part of this device consisted of source and drain contacts made from high-coercivity metallic magnets with antiparallel magnetizations. It was found that the device can be fabricated from metallic thin films in a lateral geometry.

AB - A robust magnetoelectronic three-terminal device which controls charge currents via the spin-transfer effect was proposed. The lower part of this device consisted of source and drain contacts made from high-coercivity metallic magnets with antiparallel magnetizations. It was found that the device can be fabricated from metallic thin films in a lateral geometry.

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U2 - 10.1063/1.1579122

DO - 10.1063/1.1579122

M3 - Article

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EP - 3930

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 22

ER -

Spin-torque transistor

Abstract

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