Spin-torque switching window, thermal stability, and material parameters of MgO tunnel junctions

T. Devolder, L. Bianchini, K. Miura, K. Ito, Joo Von Kim, P. Crozat, V. Morin, A. Helmer, C. Chappert, S. Ikeda, H. Ohno

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)

Abstract

We study the use of in-plane magnetized free layers with artificially lowered effective magnetization, in the context of spin-torque random access memories with magnetic tunnel junctions. We determine the field-voltage window for direct overwrite switching and thermal stability. We relate them to the magnetic constants extracted from the telegraph noise and high frequency noise exhibited by the junctions under specific conditions.

Original languageEnglish
Article number162502
JournalApplied Physics Letters
Volume98
Issue number16
DOIs
Publication statusPublished - 2011 Apr 18

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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