Spin splitting of upper electron subbands in a SiO2 /Si (100) / SiO2 quantum well with in-plane magnetic field

Y. Niida, K. Takashina, A. Fujiwara, T. Fujisawa, Y. Hirayama

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Abstract

We observe a lifting of the twofold spin degeneracy of conduction-band electrons in an upper-valley subband with in-plane magnetic field in a SiO 2 /Si (100) / SiO2 quantum well, which is manifest in a splitting of a feature in the conductivity accompanying the occupation of the upper-valley subband. The splitting increases in proportion to the in-plane magnetic field, allowing the product of the effective g -factor and effective mass g m to be obtained. The value remains constant over wide ranges of valley splitting, total electron density, and potential bias.

Original languageEnglish
Article number142101
JournalApplied Physics Letters
Volume94
Issue number14
DOIs
Publication statusPublished - 2009

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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