Spin relaxation in n-modulation doped GaAs/AlGaAs (1 1 0) quantum wells

T. Adachi, Y. Ohno, F. Matsukura, H. Ohno

Research output: Contribution to journalArticlepeer-review

51 Citations (Scopus)

Abstract

We measured the electron spin relaxation time τs in n-modulation doped GaAs/AlGaAs (110) multiple quantum wells by pump probe method. The value of τs exceeds 10 ns even at room temperature, which is two orders of magnitude longer than that in (001) GaAs quantum wells. The τs dependence on quantized-electron energy, pump beam power and temperature can qualitatively be explained by the reduction of the electron-hole exchange interaction due to screening.

Original languageEnglish
Pages (from-to)36-39
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume10
Issue number1-3
DOIs
Publication statusPublished - 2001 May

Keywords

  • Electron spin
  • GaAs/AlGaAs
  • Quantum wells
  • Spin relaxation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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