Spin relaxation in a hole-doped transition-metal dichalcogenide monolayer and bilayer with crystal defects

Tetsuro Habe, Mikito Koshino

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

We study the electronic spin relaxation effect in the hole-doped monolayer and bilayer transition-metal dichalcogenide in the presence of the crystal defects. We consider realistic models of the lattice vacancy and actually estimate the spin relaxation rate using the multi-orbital tight-binding model. In the monolayer, the spin-relaxation time is found to be extremely long compared to the momentum relaxation time, and this is attributed to the fact that the spin hybridization in the band structure is suppressed by the mirror reflection symmetry. The bilayer TMD has a much shorter spin relaxation time in contrast, and this is attributed to stronger spin hybridization due to the absence of the mirror symmetry.

Original languageEnglish
Article number075415
JournalPhysical Review B
Volume93
Issue number7
DOIs
Publication statusPublished - 2016 Feb 5

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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