Spin relaxation characteristics in Ag nanowire covered with various oxides

S. Karube; H. Idzuchi; K. Kondou; Y. Fukuma; Y. Otani

doi:10.1063/1.4931697

Spin relaxation characteristics in Ag nanowire covered with various oxides

S. Karube, H. Idzuchi, K. Kondou, Y. Fukuma, Y. Otani

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

We have studied spin relaxation characteristics in a Ag nanowire covered with various oxide layers of Bi₂O₃, Al₂O₃, HfO₂, MgO, or AgO_x by using non-local spin valve structures. The spin-flip probability, a ratio of momentum relaxation time to spin relaxation time at 10K, exhibits a gradual increase with an atomic number of the oxide constituent elements, Mg, Al, Ag, and Hf. Surprisingly, the Bi₂O₃ capping was found to increase the probability by an order of magnitude compared with other oxide layers. This finding suggests the presence of an additional spin relaxation mechanism such as Rashba effect at the Ag/Bi₂O₃ interface, which cannot be explained by the simple Elliott-Yafet mechanism via phonon, impurity, and surface scatterings. The Ag/Bi₂O₃ interface may provide functionality as a spin to charge interconversion layer.

Original language	English
Article number	122406
Journal	Applied Physics Letters
Volume	107
Issue number	12
DOIs	https://doi.org/10.1063/1.4931697
Publication status	Published - 2015 Sep 21
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Spin relaxation characteristics in Ag nanowire covered with various oxides",

abstract = "We have studied spin relaxation characteristics in a Ag nanowire covered with various oxide layers of Bi2O3, Al2O3, HfO2, MgO, or AgOx by using non-local spin valve structures. The spin-flip probability, a ratio of momentum relaxation time to spin relaxation time at 10K, exhibits a gradual increase with an atomic number of the oxide constituent elements, Mg, Al, Ag, and Hf. Surprisingly, the Bi2O3 capping was found to increase the probability by an order of magnitude compared with other oxide layers. This finding suggests the presence of an additional spin relaxation mechanism such as Rashba effect at the Ag/Bi2O3 interface, which cannot be explained by the simple Elliott-Yafet mechanism via phonon, impurity, and surface scatterings. The Ag/Bi2O3 interface may provide functionality as a spin to charge interconversion layer.",

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AU - Karube, S.

AU - Idzuchi, H.

AU - Kondou, K.

AU - Fukuma, Y.

AU - Otani, Y.

PY - 2015/9/21

Y1 - 2015/9/21

N2 - We have studied spin relaxation characteristics in a Ag nanowire covered with various oxide layers of Bi2O3, Al2O3, HfO2, MgO, or AgOx by using non-local spin valve structures. The spin-flip probability, a ratio of momentum relaxation time to spin relaxation time at 10K, exhibits a gradual increase with an atomic number of the oxide constituent elements, Mg, Al, Ag, and Hf. Surprisingly, the Bi2O3 capping was found to increase the probability by an order of magnitude compared with other oxide layers. This finding suggests the presence of an additional spin relaxation mechanism such as Rashba effect at the Ag/Bi2O3 interface, which cannot be explained by the simple Elliott-Yafet mechanism via phonon, impurity, and surface scatterings. The Ag/Bi2O3 interface may provide functionality as a spin to charge interconversion layer.

AB - We have studied spin relaxation characteristics in a Ag nanowire covered with various oxide layers of Bi2O3, Al2O3, HfO2, MgO, or AgOx by using non-local spin valve structures. The spin-flip probability, a ratio of momentum relaxation time to spin relaxation time at 10K, exhibits a gradual increase with an atomic number of the oxide constituent elements, Mg, Al, Ag, and Hf. Surprisingly, the Bi2O3 capping was found to increase the probability by an order of magnitude compared with other oxide layers. This finding suggests the presence of an additional spin relaxation mechanism such as Rashba effect at the Ag/Bi2O3 interface, which cannot be explained by the simple Elliott-Yafet mechanism via phonon, impurity, and surface scatterings. The Ag/Bi2O3 interface may provide functionality as a spin to charge interconversion layer.

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Spin relaxation characteristics in Ag nanowire covered with various oxides

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