Spin relaxation characteristics in Ag nanowire covered with various oxides

S. Karube, H. Idzuchi, K. Kondou, Y. Fukuma, Y. Otani

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11 Citations (Scopus)


We have studied spin relaxation characteristics in a Ag nanowire covered with various oxide layers of Bi2O3, Al2O3, HfO2, MgO, or AgOx by using non-local spin valve structures. The spin-flip probability, a ratio of momentum relaxation time to spin relaxation time at 10K, exhibits a gradual increase with an atomic number of the oxide constituent elements, Mg, Al, Ag, and Hf. Surprisingly, the Bi2O3 capping was found to increase the probability by an order of magnitude compared with other oxide layers. This finding suggests the presence of an additional spin relaxation mechanism such as Rashba effect at the Ag/Bi2O3 interface, which cannot be explained by the simple Elliott-Yafet mechanism via phonon, impurity, and surface scatterings. The Ag/Bi2O3 interface may provide functionality as a spin to charge interconversion layer.

Original languageEnglish
Article number122406
JournalApplied Physics Letters
Issue number12
Publication statusPublished - 2015 Sep 21
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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