TY - JOUR
T1 - Spin relaxation characteristics in Ag nanowire covered with various oxides
AU - Karube, S.
AU - Idzuchi, H.
AU - Kondou, K.
AU - Fukuma, Y.
AU - Otani, Y.
N1 - Publisher Copyright:
© 2015 AIP Publishing LLC.
PY - 2015/9/21
Y1 - 2015/9/21
N2 - We have studied spin relaxation characteristics in a Ag nanowire covered with various oxide layers of Bi2O3, Al2O3, HfO2, MgO, or AgOx by using non-local spin valve structures. The spin-flip probability, a ratio of momentum relaxation time to spin relaxation time at 10K, exhibits a gradual increase with an atomic number of the oxide constituent elements, Mg, Al, Ag, and Hf. Surprisingly, the Bi2O3 capping was found to increase the probability by an order of magnitude compared with other oxide layers. This finding suggests the presence of an additional spin relaxation mechanism such as Rashba effect at the Ag/Bi2O3 interface, which cannot be explained by the simple Elliott-Yafet mechanism via phonon, impurity, and surface scatterings. The Ag/Bi2O3 interface may provide functionality as a spin to charge interconversion layer.
AB - We have studied spin relaxation characteristics in a Ag nanowire covered with various oxide layers of Bi2O3, Al2O3, HfO2, MgO, or AgOx by using non-local spin valve structures. The spin-flip probability, a ratio of momentum relaxation time to spin relaxation time at 10K, exhibits a gradual increase with an atomic number of the oxide constituent elements, Mg, Al, Ag, and Hf. Surprisingly, the Bi2O3 capping was found to increase the probability by an order of magnitude compared with other oxide layers. This finding suggests the presence of an additional spin relaxation mechanism such as Rashba effect at the Ag/Bi2O3 interface, which cannot be explained by the simple Elliott-Yafet mechanism via phonon, impurity, and surface scatterings. The Ag/Bi2O3 interface may provide functionality as a spin to charge interconversion layer.
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U2 - 10.1063/1.4931697
DO - 10.1063/1.4931697
M3 - Article
AN - SCOPUS:84942436743
VL - 107
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 12
M1 - 122406
ER -