Spin-related transport and interference based on the Rashba spin-orbit interaction

Junsaku Nitta, Takaaki Koga, Yoshiaki Sekine

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The Rashba spin-orbit interaction in InGaAs quantum wells (QW) is studied using the weak antilocalization analysis as a function of the structural inversion asymmetry (SIA). A clear cross-over from positive to negative magnetoresistance near zero-magnetic field is observed by controlling the degree of the SIA in the QWs. This is a strong evidence of a zero-field spin splitting that is induced by the Rashba effect. The spin interference effect in a gate controlled mesoscopic loop structure is studied in the presence of the Rashba spin-orbit interaction. The oscillatory behaviors as a function of the gate voltage can be attributed to the spin interference effect. This result shows that the spin precession can be controlled by the gate voltage.

Original languageEnglish
Title of host publication2005 5th IEEE Conference on Nanotechnology
PublisherIEEE Computer Society
Pages7-10
Number of pages4
ISBN (Print)0780391993, 9780780391994
DOIs
Publication statusPublished - 2005
Event2005 5th IEEE Conference on Nanotechnology - Nagoya, Japan
Duration: 2005 Jul 112005 Jul 15

Publication series

Name2005 5th IEEE Conference on Nanotechnology
Volume1

Other

Other2005 5th IEEE Conference on Nanotechnology
CountryJapan
CityNagoya
Period05/7/1105/7/15

Keywords

  • Spin interference
  • Spin-orbit interaction
  • Spintronics

ASJC Scopus subject areas

  • Engineering(all)

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