Spin-related magnetoresistance of n-type ZnO:Al and Zn1-xMn xO:Al thin films

T. Andrearczyk, J. Jaroszyński, G. Grabecki, T. Dietl, T. Fukumura, M. Kawasaki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Effects of spin-orbit (SO) coupling and the s-d exchange interaction are probed by magnetoresistance (MR) measurements in ZnO and (Zn,Mn)O. A quantitative description of the data for ZnO in terms of weak localization (WL) theory makes it possible to determine the SO coupling constant λso, = (4.4 ± 0.4) × 10-11 eVcm. A complex and large positive MR of (Zn,Mn)O is interpreted as an effect of the s-d spin-splitting on the disorder-modified electron-electron (e-e) interactions. A large negative MR is tentatively assigned to a precursor effect of the magnetic polaron formation.

Original languageEnglish
Title of host publicationLOW TEMPERATURE PHYSICS
Subtitle of host publication24th International Conference on Low Temperature Physics - LT24
Pages1498-1499
Number of pages2
DOIs
Publication statusPublished - 2006
EventLOW TEMPERATURE PHYSICS: 24th International Conference on Low Temperature Physics - LT24 - Orlando, FL, United States
Duration: 2006 Aug 102006 Oct 17

Publication series

NameAIP Conference Proceedings
Volume850
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

OtherLOW TEMPERATURE PHYSICS: 24th International Conference on Low Temperature Physics - LT24
CountryUnited States
CityOrlando, FL
Period06/8/1006/10/17

Keywords

  • Anderson localization
  • Diluted magnetic semiconductors
  • Spin-orbit coupling

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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