Spin-related magnetoresistance of n-type ZnO:Al and Zn1-xMnxO:Al thin films

T. Andrearczyk, J. Jaroszyński, G. Grabecki, T. Dietl, T. Fukumura, M. Kawasaki

Research output: Contribution to journalArticlepeer-review

121 Citations (Scopus)

Abstract

Effects of spin-orbit and s-d exchange interactions are probed by magnetoresistance (MR) measurements carried out down to 50mK on ZnO and Zn1-xMnxO with x=3 and 7% and electron concentration ∼1020cm-3. A description of the data for ZnO:Al in terms of weak-localization theory leads to the coupling constant λso=(4.4±0.4)×10-11eVcm of the kp hamiltonian for the wurzite structure, Hso=λsoc(s×k). A complex and large MR of Zn1-xMnxO:Al is interpreted in terms of the influence of the s-d spin-splitting on the disorder-modified electron-electron interactions, which explains positive MR. A large negative MR is tentatively assigned to a precursor effect of the magnetic polaron formation. It is suggested that the proposed model explains the origin of MR observed recently in many magnetic oxide systems.

Original languageEnglish
Article number121309
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume72
Issue number12
DOIs
Publication statusPublished - 2005 Sep 15

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Spin-related magnetoresistance of n-type ZnO:Al and Zn1-xMnxO:Al thin films'. Together they form a unique fingerprint.

Cite this