Spin-RAM for normally-off computer

K. Ando, K. Yakushiji, H. Kubota, A. Fukushima, S. Yuasa, T. Kai, T. Kishi, N. Shimomura, H. Aikawa, M. Yoshikawa, T. Nagase, K. Nishiyama, E. Kitagawa, T. Daibou, M. Amano, S. Takahashi, M. Nakayama, S. Ikegawa, M. Nagamine, J. OzekiD. Watanabe, H. Yoda, T. Nozaki, Y. Suzuki, M. Oogane, S. Mizukami, Y. Ando, T. Miyazaki, Y. Nakatani

Research output: Contribution to conferencePaper

3 Citations (Scopus)

Abstract

Spin-RAM technologies for operation speed faster than 30 ns, memory capacity larger than 1 Gbits and practically infinite read/write endurance have been developed by using magnetic tunnel junctions with perpendicular magnetization layers. Combination of Spin-RAM and power-gating technology will enable ultra low power computer called Normally-Off Computer.

Original languageEnglish
Pages20-25
Number of pages6
DOIs
Publication statusPublished - 2011 Dec 1
Event2011 11th Annual Non-Volatile Memory Technology Symposium, NVMTS 2011 - Shanghai, China
Duration: 2011 Nov 72011 Nov 9

Other

Other2011 11th Annual Non-Volatile Memory Technology Symposium, NVMTS 2011
CountryChina
CityShanghai
Period11/11/711/11/9

Keywords

  • MTJ
  • Spin-RAM
  • TMR
  • current-induced-magnetization-reversal
  • perpendicular magnetization

ASJC Scopus subject areas

  • Hardware and Architecture

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    Ando, K., Yakushiji, K., Kubota, H., Fukushima, A., Yuasa, S., Kai, T., Kishi, T., Shimomura, N., Aikawa, H., Yoshikawa, M., Nagase, T., Nishiyama, K., Kitagawa, E., Daibou, T., Amano, M., Takahashi, S., Nakayama, M., Ikegawa, S., Nagamine, M., ... Nakatani, Y. (2011). Spin-RAM for normally-off computer. 20-25. Paper presented at 2011 11th Annual Non-Volatile Memory Technology Symposium, NVMTS 2011, Shanghai, China. https://doi.org/10.1109/NVMTS.2011.6137104