Spin precession of holes in wurtzite GaN studied using the time-resolved Kerr rotation technique

C. Y. Hu; K. Morita; H. Sanada; S. Matsuzaka; Y. Ohno; H. Ohno

doi:10.1103/PhysRevB.72.121203

Spin precession of holes in wurtzite GaN studied using the time-resolved Kerr rotation technique

C. Y. Hu, K. Morita, H. Sanada, S. Matsuzaka, Y. Ohno, H. Ohno

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Abstract

The coherent spin dynamics of holes in Mg-doped (p-type) wurtzite GaN is studied by time-resolved Kerr rotation technique. We observe the spin precession of holes with the spin coherence time of 120ps, which is distinguished from that of electrons by comparison with the results in Si-doped n-GaN. The g factor anisotropy of holes is determined to be g h=2.17±0.03 and g h=2.27±0.03. We identify that the involved holes are in the valence band B (upper Γ7) of wurtzite GaN.

Original language	English
Article number	121203
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	72
Issue number	12
DOIs	https://doi.org/10.1103/PhysRevB.72.121203
Publication status	Published - 2005 Sep 15

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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abstract = "The coherent spin dynamics of holes in Mg-doped (p-type) wurtzite GaN is studied by time-resolved Kerr rotation technique. We observe the spin precession of holes with the spin coherence time of 120ps, which is distinguished from that of electrons by comparison with the results in Si-doped n-GaN. The g factor anisotropy of holes is determined to be g h=2.17±0.03 and g h=2.27±0.03. We identify that the involved holes are in the valence band B (upper Γ7) of wurtzite GaN.",

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AU - Hu, C. Y.

AU - Morita, K.

AU - Sanada, H.

AU - Matsuzaka, S.

AU - Ohno, Y.

AU - Ohno, H.

PY - 2005/9/15

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AB - The coherent spin dynamics of holes in Mg-doped (p-type) wurtzite GaN is studied by time-resolved Kerr rotation technique. We observe the spin precession of holes with the spin coherence time of 120ps, which is distinguished from that of electrons by comparison with the results in Si-doped n-GaN. The g factor anisotropy of holes is determined to be g h=2.17±0.03 and g h=2.27±0.03. We identify that the involved holes are in the valence band B (upper Γ7) of wurtzite GaN.

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