Current status on the study of spin-polarized tunneling magnetoresistive effect was reviewed. Special emphasis was placed on the tunneling barrier height dependence of magnetoresistance ratio and interlayer exchange coupling in the microstructured junctions made by photolithography.
- Interlayer exchange coupling
- Spin tunneling magnetoresistivity effect
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering