Spin-polarized transport through doped nanotube junctions in presence of applied magnetic field

A. A. Farajian, H. Mizuseki, Y. Kawazoe

Research output: Contribution to journalConference articlepeer-review

Abstract

The effects of different spin orientations on transport through carbon nanotubes are studied, using a simple tight-binding model within the mean-field approximation. It turns out that, in the absence of external magnetic field, the mean-field ground states of both semiconducting and metallic nanotubes are antiferromagnetic. As regards electronic/transport properties, it is observed that the conductance characteristics of spin-up and spin-down carriers are separated, and a negative differential resistance (NDR) feature in the I-V characteristics is detected, when the system is subjected to external magnetic field. NDR is particularly interesting for a wide range of applications.

Original languageEnglish
Pages (from-to)472-474
Number of pages3
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume5023
DOIs
Publication statusPublished - 2003 Sep 15
Event10th International Symposium on Nanostructures: Physics and Technology - St. Petersburg, Russian Federation
Duration: 2002 Jun 172002 Jun 21

Keywords

  • Carbon nanotubes
  • Current-voltage characteristics
  • Doped nanotube junctions
  • Negative differential resistance (NDR)
  • Spin-polarized transport

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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