Spin-polarized magnetic tunnelling magnetoresistive effects in various junctions

T. Miyazaki; N. Tezuka; S. Kumagai; Y. Ando; H. Kubota; J. Murai; T. Watabe; M. Yokota

doi:10.1088/0022-3727/31/6/009

Spin-polarized magnetic tunnelling magnetoresistive effects in various junctions

T. Miyazaki, N. Tezuka, S. Kumagai, Y. Ando, H. Kubota, J. Murai, T. Watabe, M. Yokota

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

Recent progress concerning spin-polarized magnetic tunnelling effects for (i) trilayer standard ferromagnet (F)/insulator (l)/ferromagnet (F) junctions, (ii) spin-valve-type junctions, (iii) trilayer or multilayer ferromagnet/granular/ferromagnet junctions and (iv) F/I/F junction with a 'wedge-geometry' insulator is reviewed. Special emphasis is placed on the dependence of the tunnel magnetoresistance ratio on temperature and also the intensity of the applied voltage. It was found that the resistance for the saturation magnetization state, R_S, and the tunnelling magnetoresistance ratio, TMR, of an Fe/Al₂O₃/Fe junction decreased rapidly with increasing temperature, whereas those of a NiFe/Al₂O₃/Co junction were insensitive to temperature. Concerning the bias voltage dependence of R_S and TMR, the same tendency with temperature was observed for Fe/Al₂O₃/Fe and NiFe/Al₂O₃/Co junctions. Spin-valve-type junction exchange biased by a FeMn layer exhibits a relatively large TMR ratio up to about 400 K.

Original language	English
Pages (from-to)	630-636
Number of pages	7
Journal	Journal of Physics D: Applied Physics
Volume	31
Issue number	6
DOIs	https://doi.org/10.1088/0022-3727/31/6/009
Publication status	Published - 1998 Mar 21

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Acoustics and Ultrasonics
Surfaces, Coatings and Films

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title = "Spin-polarized magnetic tunnelling magnetoresistive effects in various junctions",

abstract = "Recent progress concerning spin-polarized magnetic tunnelling effects for (i) trilayer standard ferromagnet (F)/insulator (l)/ferromagnet (F) junctions, (ii) spin-valve-type junctions, (iii) trilayer or multilayer ferromagnet/granular/ferromagnet junctions and (iv) F/I/F junction with a 'wedge-geometry' insulator is reviewed. Special emphasis is placed on the dependence of the tunnel magnetoresistance ratio on temperature and also the intensity of the applied voltage. It was found that the resistance for the saturation magnetization state, RS, and the tunnelling magnetoresistance ratio, TMR, of an Fe/Al2O3/Fe junction decreased rapidly with increasing temperature, whereas those of a NiFe/Al2O3/Co junction were insensitive to temperature. Concerning the bias voltage dependence of RS and TMR, the same tendency with temperature was observed for Fe/Al2O3/Fe and NiFe/Al2O3/Co junctions. Spin-valve-type junction exchange biased by a FeMn layer exhibits a relatively large TMR ratio up to about 400 K.",

author = "T. Miyazaki and N. Tezuka and S. Kumagai and Y. Ando and H. Kubota and J. Murai and T. Watabe and M. Yokota",

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AU - Miyazaki, T.

AU - Tezuka, N.

AU - Kumagai, S.

AU - Ando, Y.

AU - Kubota, H.

AU - Murai, J.

AU - Watabe, T.

AU - Yokota, M.

PY - 1998/3/21

Y1 - 1998/3/21

N2 - Recent progress concerning spin-polarized magnetic tunnelling effects for (i) trilayer standard ferromagnet (F)/insulator (l)/ferromagnet (F) junctions, (ii) spin-valve-type junctions, (iii) trilayer or multilayer ferromagnet/granular/ferromagnet junctions and (iv) F/I/F junction with a 'wedge-geometry' insulator is reviewed. Special emphasis is placed on the dependence of the tunnel magnetoresistance ratio on temperature and also the intensity of the applied voltage. It was found that the resistance for the saturation magnetization state, RS, and the tunnelling magnetoresistance ratio, TMR, of an Fe/Al2O3/Fe junction decreased rapidly with increasing temperature, whereas those of a NiFe/Al2O3/Co junction were insensitive to temperature. Concerning the bias voltage dependence of RS and TMR, the same tendency with temperature was observed for Fe/Al2O3/Fe and NiFe/Al2O3/Co junctions. Spin-valve-type junction exchange biased by a FeMn layer exhibits a relatively large TMR ratio up to about 400 K.

AB - Recent progress concerning spin-polarized magnetic tunnelling effects for (i) trilayer standard ferromagnet (F)/insulator (l)/ferromagnet (F) junctions, (ii) spin-valve-type junctions, (iii) trilayer or multilayer ferromagnet/granular/ferromagnet junctions and (iv) F/I/F junction with a 'wedge-geometry' insulator is reviewed. Special emphasis is placed on the dependence of the tunnel magnetoresistance ratio on temperature and also the intensity of the applied voltage. It was found that the resistance for the saturation magnetization state, RS, and the tunnelling magnetoresistance ratio, TMR, of an Fe/Al2O3/Fe junction decreased rapidly with increasing temperature, whereas those of a NiFe/Al2O3/Co junction were insensitive to temperature. Concerning the bias voltage dependence of RS and TMR, the same tendency with temperature was observed for Fe/Al2O3/Fe and NiFe/Al2O3/Co junctions. Spin-valve-type junction exchange biased by a FeMn layer exhibits a relatively large TMR ratio up to about 400 K.

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Spin-polarized magnetic tunnelling magnetoresistive effects in various junctions

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