Spin-Orbit-Torque Memory Operation of Synthetic Antiferromagnets

Takahiro Moriyama, Weinan Zhou, Takeshi Seki, Koki Takanashi, Teruo Ono

Research output: Contribution to journalArticlepeer-review

39 Citations (Scopus)


In this Letter, we show the demonstration of a sequential antiferromagnetic memory operation with a spin-orbit-torque write, by the spin Hall effect, and a resistive read in the CoGd synthetic antiferromagnetic bits, in which we reveal the distinct differences in the spin-orbit-torque and field-induced switching mechanisms of the antiferromagnetic moment, or the Néel vector. In addition to the comprehensive spin torque memory operation, our thorough investigations also highlight the high immunity to a field disturbance as well as a memristive behavior of the antiferromagnetic bits.

Original languageEnglish
Article number167202
JournalPhysical review letters
Issue number16
Publication statusPublished - 2018 Oct 18

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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