Spin-orbit torque-induced switching of in-plane magnetized elliptic nanodot arrays with various easy-axis directions measured by differential planar Hall resistance

Yu Takahashi, Yutaro Takeuchi, Chaoliang Zhang, Butsurin Jinnai, Shunsuke Fukami, Hideo Ohno

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

Spin-orbit torque-induced switching of an elliptical nanomagnet with an in-plane easy axis allows sub-ns and field-free operation. Since its properties crucially depend on the design of the nanomagnet such as the easy-axis direction, it is of high importance to systematically elucidate the dependence of performance on various parameters of the nanomagnet towards magnetoresistive random access memory applications. Here, we show a scheme to statistically evaluate the switching properties of in-plane nanomagnets in a short turnaround time. We use devices with an array of CoFeB/MgO nanomagnets formed on a cross-shaped Ta/W Hall bar, and the differential planar Hall resistance is measured to study the magnetization switching. Using the scheme, we investigate the easy-axis angle dependence of switching properties at zero magnetic fields for various current pulse widths from 100 ms to 1.7 ns. We show that the dependence of threshold switching current on the easy-axis direction significantly varies with the pulse width.

Original languageEnglish
Article number012410
JournalApplied Physics Letters
Volume114
Issue number1
DOIs
Publication statusPublished - 2019 Jan 7

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Spin-orbit torque-induced switching of in-plane magnetized elliptic nanodot arrays with various easy-axis directions measured by differential planar Hall resistance'. Together they form a unique fingerprint.

Cite this