Spin-orbit torque induced magnetization switching in Co/Pt multilayers

Butsurin Jinnai; Chaoliang Zhang; Aleksandr Kurenkov; Mathias Bersweiler; Hideo Sato; Shunsuke Fukami; Hideo Ohno

doi:10.1063/1.5001171

Spin-orbit torque induced magnetization switching in Co/Pt multilayers

Butsurin Jinnai, Chaoliang Zhang, Aleksandr Kurenkov, Mathias Bersweiler, Hideo Sato, Shunsuke Fukami, Hideo Ohno

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

Spin-orbit torque (SOT)-induced magnetization switching in Co/Pt multilayer structures with a Pt buffer layer is studied aiming to realize SOT-magnetic random access memory (MRAM) devices with high thermal stability. Current-induced magnetization switching and effective fields are measured using Hall-bar devices. The switching efficiency, defined as a ratio of the areal anisotropy energy density to switching current density, increases with increasing the number of Co/Pt stacks. This trend is in accordance with the stacking number dependence of effective fields per unit current density. The effective spin-Hall angle of the Pt buffer layer for the sample with multiple Co/Pt stacks is significantly larger than that of Pt previously reported, suggesting a generation of SOT in Co/Pt multilayers. These results indicate that Co/Pt multilayers are promising for SOT-MRAM devices possessing high thermal stability and small switching current.

Original language	English
Article number	102402
Journal	Applied Physics Letters
Volume	111
Issue number	10
DOIs	https://doi.org/10.1063/1.5001171
Publication status	Published - 2017 Sept 4

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.5001171

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title = "Spin-orbit torque induced magnetization switching in Co/Pt multilayers",

abstract = "Spin-orbit torque (SOT)-induced magnetization switching in Co/Pt multilayer structures with a Pt buffer layer is studied aiming to realize SOT-magnetic random access memory (MRAM) devices with high thermal stability. Current-induced magnetization switching and effective fields are measured using Hall-bar devices. The switching efficiency, defined as a ratio of the areal anisotropy energy density to switching current density, increases with increasing the number of Co/Pt stacks. This trend is in accordance with the stacking number dependence of effective fields per unit current density. The effective spin-Hall angle of the Pt buffer layer for the sample with multiple Co/Pt stacks is significantly larger than that of Pt previously reported, suggesting a generation of SOT in Co/Pt multilayers. These results indicate that Co/Pt multilayers are promising for SOT-MRAM devices possessing high thermal stability and small switching current.",

author = "Butsurin Jinnai and Chaoliang Zhang and Aleksandr Kurenkov and Mathias Bersweiler and Hideo Sato and Shunsuke Fukami and Hideo Ohno",

note = "Funding Information: We thank T. Hirata, H. Iwanuma, Y. Kawato, K. Goto, and C. Igarashi for their technical support. A part of this work was supported by the R&D Project for ICT Key Technology of MEXT, ImPACT Program of CSTI, and JST-OPERA. Publisher Copyright: {\textcopyright} 2017 Author(s).",

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AU - Jinnai, Butsurin

AU - Zhang, Chaoliang

AU - Kurenkov, Aleksandr

AU - Bersweiler, Mathias

AU - Sato, Hideo

AU - Fukami, Shunsuke

AU - Ohno, Hideo

N1 - Funding Information: We thank T. Hirata, H. Iwanuma, Y. Kawato, K. Goto, and C. Igarashi for their technical support. A part of this work was supported by the R&D Project for ICT Key Technology of MEXT, ImPACT Program of CSTI, and JST-OPERA. Publisher Copyright: © 2017 Author(s).

PY - 2017/9/4

Y1 - 2017/9/4

N2 - Spin-orbit torque (SOT)-induced magnetization switching in Co/Pt multilayer structures with a Pt buffer layer is studied aiming to realize SOT-magnetic random access memory (MRAM) devices with high thermal stability. Current-induced magnetization switching and effective fields are measured using Hall-bar devices. The switching efficiency, defined as a ratio of the areal anisotropy energy density to switching current density, increases with increasing the number of Co/Pt stacks. This trend is in accordance with the stacking number dependence of effective fields per unit current density. The effective spin-Hall angle of the Pt buffer layer for the sample with multiple Co/Pt stacks is significantly larger than that of Pt previously reported, suggesting a generation of SOT in Co/Pt multilayers. These results indicate that Co/Pt multilayers are promising for SOT-MRAM devices possessing high thermal stability and small switching current.

AB - Spin-orbit torque (SOT)-induced magnetization switching in Co/Pt multilayer structures with a Pt buffer layer is studied aiming to realize SOT-magnetic random access memory (MRAM) devices with high thermal stability. Current-induced magnetization switching and effective fields are measured using Hall-bar devices. The switching efficiency, defined as a ratio of the areal anisotropy energy density to switching current density, increases with increasing the number of Co/Pt stacks. This trend is in accordance with the stacking number dependence of effective fields per unit current density. The effective spin-Hall angle of the Pt buffer layer for the sample with multiple Co/Pt stacks is significantly larger than that of Pt previously reported, suggesting a generation of SOT in Co/Pt multilayers. These results indicate that Co/Pt multilayers are promising for SOT-MRAM devices possessing high thermal stability and small switching current.

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Spin-orbit torque induced magnetization switching in Co/Pt multilayers

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