TY - JOUR
T1 - Spin injection, transport, and read/write operation in spin-based MOSFET
AU - Saito, Yoshiaki
AU - Marukame, Takao
AU - Inokuchi, Tomoaki
AU - Ishikawa, Mizue
AU - Sugiyama, Hideyuki
AU - Tanamoto, Tetsufumi
N1 - Funding Information:
The authors wish to thank Prof. K. Inomata (National Institute for Materials Science), Prof. M. Tanaka (the University of Tokyo), and Prof. S. Sugahara (Tokyo Institute of Technology) for useful discussion. This work was partly supported by the New Energy and Industrial Technology Development Organization (NEDO) and the Grant-in-Aid for Scientific Research (B) ( 22360002 ) from JSPS.
PY - 2011/9/30
Y1 - 2011/9/30
N2 - We proposed a novel spin-based MOSFET "Spin-Transfer-torque-Switching MOSFET (STS-MOSFET)" that offers non-volatile memory and transistor functions with complementary metal-oxide-semiconductor (CMOS) compatibility, high endurance and fast write time using STS. The STS-MOSFETs with Heusler alloy (Co2Fe1Al0.5Si0.5) were prepared and reconfigurability of a novel spintronics-based MOSFET, STS-MOSFET, was successfully realized for the transport properties owing to reduction of the contact resistance in ferromagnetic metal/thin insulator tunnel barrier/Si junctions. The device showed magnetocurrent (MC) and write characteristics with the endurance of over 105 cycles. It was also clarified that the read characteristic can be improved in terms of MC ratio, however, is deteriorated in terms of the mobility by choosing connection configurations of the source and the drain in the STS-MOSFETs.
AB - We proposed a novel spin-based MOSFET "Spin-Transfer-torque-Switching MOSFET (STS-MOSFET)" that offers non-volatile memory and transistor functions with complementary metal-oxide-semiconductor (CMOS) compatibility, high endurance and fast write time using STS. The STS-MOSFETs with Heusler alloy (Co2Fe1Al0.5Si0.5) were prepared and reconfigurability of a novel spintronics-based MOSFET, STS-MOSFET, was successfully realized for the transport properties owing to reduction of the contact resistance in ferromagnetic metal/thin insulator tunnel barrier/Si junctions. The device showed magnetocurrent (MC) and write characteristics with the endurance of over 105 cycles. It was also clarified that the read characteristic can be improved in terms of MC ratio, however, is deteriorated in terms of the mobility by choosing connection configurations of the source and the drain in the STS-MOSFETs.
KW - Heusler alloy
KW - Magnetocurrent ratio
KW - Read/write endurance
KW - Spin-MOSFET
KW - Spin-dependent transport
KW - Spin-transfer- torque-switching
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U2 - 10.1016/j.tsf.2011.03.073
DO - 10.1016/j.tsf.2011.03.073
M3 - Article
AN - SCOPUS:80052758874
VL - 519
SP - 8266
EP - 8273
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
IS - 23
ER -