Spin injection, transport, and detection in a lateral spin transport devices with Co2FeAl0.5Si0.5/n-GaAs, Co2FeSi/MgO/n-Si, and CoFe/MgO/n-Si junctions

Research output: Contribution to journalReview article

Abstract

We demonstrate spin injection, transport, and detection in a lateral spin transport devices with Co2FeAl0.5Si0.5/n-GaAs, Co2FeSi/MgO/n-Si, and CoFe/MgO/n-Si junctions. Non-local four- and three-terminal Hanle-effect signals indicate large spin injection/detection efficiency in Si for Co2FeSi/MgO/Si on insulator (SOI) devices compared with CoFe/MgO/SOI devices, whereas the preparation methods of MgO layers on SOI are exactly same in both devices. The estimated spin injection/detection efficiency in GaAs is 0.06 at 4.2 K, which is also larger than those of the devices with Fe and CoFe electrodes. Different properties in the bias voltage dependences on the amplitude of spin accumulation signals are also observed between Co2FeSi/MgO/SOI and CoFe/MgO/SOI devices. These results indicate that the species of ferromagnetic material definitely influences the amplitude and the behavior of the spin signals.

Original languageEnglish
Pages (from-to)767-772
Number of pages6
JournalMaterials Transactions
Volume57
Issue number6
DOIs
Publication statusPublished - 2016 Jan 1

Keywords

  • Hanle effect
  • Semiconductor spintronics
  • Spin accumulation
  • Spin injection/detection
  • Spin transport

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Spin injection, transport, and detection in a lateral spin transport devices with Co<sub>2</sub>FeAl<sub>0.5</sub>Si<sub>0.5</sub>/n-GaAs, Co<sub>2</sub>FeSi/MgO/n-Si, and CoFe/MgO/n-Si junctions'. Together they form a unique fingerprint.

  • Cite this