TY - JOUR
T1 - Spin injection, transport, and detection at room temperature in a lateral spin transport device with Co2FeAl0.5Si 0.5/n-GaAs schottky tunnel junctions
AU - Saito, Tatsuya
AU - Tezuka, Nobuki
AU - Matsuura, Masashi
AU - Sugimoto, Satoshi
PY - 2013/10/1
Y1 - 2013/10/1
N2 - We observed spin-valve signals and Hanle signals in four-terminal nonlocal measurements on a lateral spin transport device with Co2FeAl 0.5Si0.5(CFAS)/n-GaAs Schottky tunnel junctions. The estimated spin injection/detection efficiency was 0.06 at 4.2 K, which is larger than those of the devices with Fe and CoFe electrodes [Nature Physics 3 (2007) 197 and Appl. Phys. Lett. 99 (2011) 082108]. The spin diffusion length estimated from Hanle signals was consistent with the gap length dependency of the spin-valve signals. Furthermore, the spin-valve signals were observed at up to 290 K. This is the first demonstration of detecting spin accumulation in semiconductor with full-Heusler alloys electrodes at room temperature.
AB - We observed spin-valve signals and Hanle signals in four-terminal nonlocal measurements on a lateral spin transport device with Co2FeAl 0.5Si0.5(CFAS)/n-GaAs Schottky tunnel junctions. The estimated spin injection/detection efficiency was 0.06 at 4.2 K, which is larger than those of the devices with Fe and CoFe electrodes [Nature Physics 3 (2007) 197 and Appl. Phys. Lett. 99 (2011) 082108]. The spin diffusion length estimated from Hanle signals was consistent with the gap length dependency of the spin-valve signals. Furthermore, the spin-valve signals were observed at up to 290 K. This is the first demonstration of detecting spin accumulation in semiconductor with full-Heusler alloys electrodes at room temperature.
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U2 - 10.7567/APEX.6.103006
DO - 10.7567/APEX.6.103006
M3 - Article
AN - SCOPUS:84887703643
VL - 6
JO - Applied Physics Express
JF - Applied Physics Express
SN - 1882-0778
IS - 10
M1 - 103006
ER -