Spin injection and detection between CoFe/AlO x junctions and SOI investigated by Hanle effect measurements

Tomoaki Inokuchi, Mizue Ishikawa, Hideyuki Sugiyama, Yoshiaki Saito, Nobuki Tezuka

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)

Abstract

Spin injection and detection properties in Co 50Fe 50/AlO x/SOI (Si on insulator) junctions were investigated by using Hanle effect measurements up to room temperature. Cross-sectional transmission electron microscope images and Fourier transform images of the Co 50Fe 50/AlO x/SOI junction, fabricated by using appropriate oxidation condition, indicate the AlO x layer became single-crystal-like and spin injection and detection were realized at room temperature. In contrast, in junction fabricated by using excess oxidation condition, AlO x layer became poly-crystal-like and spin injection was not realized though spin injection was realized below 150 K. These results indicate that appropriate oxidation is essential to fabricate AlO x tunnel barrier with good crystallinity and realize spin injection and detection at room temperature.

Original languageEnglish
Article number07C316
JournalJournal of Applied Physics
Volume111
Issue number7
DOIs
Publication statusPublished - 2012 Apr 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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