Spin injection and detection properties in Co 50Fe 50/AlO x/SOI (Si on insulator) junctions were investigated by using Hanle effect measurements up to room temperature. Cross-sectional transmission electron microscope images and Fourier transform images of the Co 50Fe 50/AlO x/SOI junction, fabricated by using appropriate oxidation condition, indicate the AlO x layer became single-crystal-like and spin injection and detection were realized at room temperature. In contrast, in junction fabricated by using excess oxidation condition, AlO x layer became poly-crystal-like and spin injection was not realized though spin injection was realized below 150 K. These results indicate that appropriate oxidation is essential to fabricate AlO x tunnel barrier with good crystallinity and realize spin injection and detection at room temperature.
ASJC Scopus subject areas
- Physics and Astronomy(all)