Spin generation and manipulation based on spin-orbit interaction in semiconductors

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

This chapter focuses on the electron spin degree of freedom in semiconductor spintronics. In particular, the electrostatic control of the spin degree of freedom is an advantageous technology over metal-based spintronics. Spin-orbit interaction (SOI), which gives rise to an effective magnetic field. The essence of SOI is that the moving electrons in an electric field feel an effective magnetic field even without any external magnetic field. Rashba spin-orbit interaction is important since the strength is controlled by the gate voltage on top of the semiconductor's two-dimensional electron gas. By utilizing the effective magnetic field induced by the SOI, spin generation and manipulation are possible by electrostatic ways. The origin of spin-orbit interactions in semiconductors and the electrical generation and manipulation of spins by electrical means are discussed. Long spin coherence is achieved by special spin helix state where both strengths of Rashba and Dresselhaus SOI are equal.

Original languageEnglish
Title of host publicationSpin Current
PublisherOxford University Press
Pages226-246
Number of pages21
ISBN (Print)9780198787075
DOIs
Publication statusPublished - 2017 Dec 21

Keywords

  • Electrostatic manipulation of spin
  • Semiconductor spintronics
  • Spin generation
  • Spin interferometer
  • Spin-orbit interaction
  • Spin-polarized carriers
  • Stern-Gerlach effect

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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