Spin-dependent tunneling in double tunnel junctions with a discontinuous intermediate layer

Yoshiaki Saito; K. Nakajima; K. Tanaka; K. Inomata

doi:10.1109/20.801020

Spin-dependent tunneling in double tunnel junctions with a discontinuous intermediate layer

Yoshiaki Saito, K. Nakajima, K. Tanaka, K. Inomata

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Detailed characteristics and tunnel magnetoresistance (TMR) properties of the double tunnel junctions (DTJs) through Co₈₀Pt₂₀, hard magnetic particles were investigated in the low barrier height regime. Significant difference in current distribution effect was observed in DTJs through discontinuous particles. No geometrically enhanced magnetoresistance occurs in the cross-shaped 0.01 mm² size junctions when the measured junction resistance is 10 times smaller than the electrode resistance due to the decrease in the effective junction area in DTJs with discontinuous ferromagnetic particles. Moreover, temperature independent TMR ratio and enhancement of the TMR ratio in a low bias voltage regime were observed in DTJs through Co₈₀Pt₂₀ hard magnetic particles in low barrier height regime.

Original language	English
Pages (from-to)	2904-2906
Number of pages	3
Journal	IEEE Transactions on Magnetics
Volume	35
Issue number	5 PART 1
DOIs	https://doi.org/10.1109/20.801020
Publication status	Published - 1999 Dec 1
Externally published	Yes

Keywords

Ferromagnetic double tunnel junctions
Temperature and dc bias dependencies
Tunnel magnetoresistance

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/20.801020

Cite this

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abstract = "Detailed characteristics and tunnel magnetoresistance (TMR) properties of the double tunnel junctions (DTJs) through Co80Pt20, hard magnetic particles were investigated in the low barrier height regime. Significant difference in current distribution effect was observed in DTJs through discontinuous particles. No geometrically enhanced magnetoresistance occurs in the cross-shaped 0.01 mm2 size junctions when the measured junction resistance is 10 times smaller than the electrode resistance due to the decrease in the effective junction area in DTJs with discontinuous ferromagnetic particles. Moreover, temperature independent TMR ratio and enhancement of the TMR ratio in a low bias voltage regime were observed in DTJs through Co80Pt20 hard magnetic particles in low barrier height regime.",

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T1 - Spin-dependent tunneling in double tunnel junctions with a discontinuous intermediate layer

AU - Saito, Yoshiaki

AU - Nakajima, K.

AU - Tanaka, K.

AU - Inomata, K.

PY - 1999/12/1

Y1 - 1999/12/1

N2 - Detailed characteristics and tunnel magnetoresistance (TMR) properties of the double tunnel junctions (DTJs) through Co80Pt20, hard magnetic particles were investigated in the low barrier height regime. Significant difference in current distribution effect was observed in DTJs through discontinuous particles. No geometrically enhanced magnetoresistance occurs in the cross-shaped 0.01 mm2 size junctions when the measured junction resistance is 10 times smaller than the electrode resistance due to the decrease in the effective junction area in DTJs with discontinuous ferromagnetic particles. Moreover, temperature independent TMR ratio and enhancement of the TMR ratio in a low bias voltage regime were observed in DTJs through Co80Pt20 hard magnetic particles in low barrier height regime.

AB - Detailed characteristics and tunnel magnetoresistance (TMR) properties of the double tunnel junctions (DTJs) through Co80Pt20, hard magnetic particles were investigated in the low barrier height regime. Significant difference in current distribution effect was observed in DTJs through discontinuous particles. No geometrically enhanced magnetoresistance occurs in the cross-shaped 0.01 mm2 size junctions when the measured junction resistance is 10 times smaller than the electrode resistance due to the decrease in the effective junction area in DTJs with discontinuous ferromagnetic particles. Moreover, temperature independent TMR ratio and enhancement of the TMR ratio in a low bias voltage regime were observed in DTJs through Co80Pt20 hard magnetic particles in low barrier height regime.

KW - Ferromagnetic double tunnel junctions

KW - Temperature and dc bias dependencies

KW - Tunnel magnetoresistance

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Spin-dependent tunneling in double tunnel junctions with a discontinuous intermediate layer

Abstract

Keywords

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