Spin-dependent tunneling in double tunnel junctions with a discontinuous intermediate layer

Y. Saito, K. Nakajima, K. Tanaka, K. Inomata

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


Detailed characteristics and tunnel magnetoresistance (TMR) properties of the double tunnel junctions (DTJs) through Co80Pt20, hard magnetic particles were investigated in the low barrier height regime. Significant difference in current distribution effect was observed in DTJs through discontinuous particles. No geometrically enhanced magnetoresistance occurs in the cross-shaped 0.01 mm2 size junctions when the measured junction resistance is 10 times smaller than the electrode resistance due to the decrease in the effective junction area in DTJs with discontinuous ferromagnetic particles. Moreover, temperature independent TMR ratio and enhancement of the TMR ratio in a low bias voltage regime were observed in DTJs through Co80Pt20 hard magnetic particles in low barrier height regime.

Original languageEnglish
Pages (from-to)2904-2906
Number of pages3
JournalIEEE Transactions on Magnetics
Issue number5 PART 1
Publication statusPublished - 1999
Externally publishedYes


  • Ferromagnetic double tunnel junctions
  • Temperature and dc bias dependencies
  • Tunnel magnetoresistance

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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