Spin-dependent tunneling between a soft ferromagnetic layer and hard magnetic nanosize particles

Koichiro Inomata; Hideo Ogiwara; Yoshiaki Saito; Keiichiro Yusu; Katsutaro Ichihara

doi:10.1143/jjap.36.l1380

Spin-dependent tunneling between a soft ferromagnetic layer and hard magnetic nanosize particles

Koichiro Inomata, Hideo Ogiwara, Yoshiaki Saito, Keiichiro Yusu, Katsutaro Ichihara

Center for Innovative Integrated Electronic Systems (CIES)

Research output: Contribution to journal › Article

15 Citations (Scopus)

Abstract

Spin-dependent tunneling has been investigated for ferromagnetic tunnel junctions with a new structure, which consists of a hard ferromagnetic insulating granular thin film sandwiched between two soft ferromagnetic layers, or soft ferromagnetic and non-ferromagnetic layers. The granular film, consisting of ferromagnetic Co₈₀Pt₂₀ nanosize particles embedded in a SiO₂ matrix with 13 nm thickness, has a high coercive force. The film was prepared by co-sputtering of Co₈₀Pt₂₀ and SiO₂ targets on a glass substrate with a Cr or a Co₈₀Pt₂₀/Fe underlayer as a bottom electrode. A ferromagnetic Co₉Fe layer as a top electrode was deposited over the granular film to form cross pattern junctions of 0.01 mm² junction area through a metal mask. The tunneling magnetoresistance up to 4.5% at RT was observed for a Co₉Fe/Co₈₀Pt₂₀-SiO₂/Co ₈₀Pt₂₀/Fe junction at a low field.

Original language	English
Pages (from-to)	L1380-L1383
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	36
Issue number	10 SUPPL. B
DOIs	https://doi.org/10.1143/jjap.36.l1380
Publication status	Published - 1997 Oct 15

Keywords

Ferromagnetic
Granular
Hard magnetic
Junction
MR
Tunnel

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy (miscellaneous)
Physics and Astronomy(all)

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Inomata, K., Ogiwara, H., Saito, Y., Yusu, K., & Ichihara, K. (1997). Spin-dependent tunneling between a soft ferromagnetic layer and hard magnetic nanosize particles. Japanese Journal of Applied Physics, Part 2: Letters, 36(10 SUPPL. B), L1380-L1383. https://doi.org/10.1143/jjap.36.l1380

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AU - Ichihara, Katsutaro

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AB - Spin-dependent tunneling has been investigated for ferromagnetic tunnel junctions with a new structure, which consists of a hard ferromagnetic insulating granular thin film sandwiched between two soft ferromagnetic layers, or soft ferromagnetic and non-ferromagnetic layers. The granular film, consisting of ferromagnetic Co80Pt20 nanosize particles embedded in a SiO2 matrix with 13 nm thickness, has a high coercive force. The film was prepared by co-sputtering of Co80Pt20 and SiO2 targets on a glass substrate with a Cr or a Co80Pt20/Fe underlayer as a bottom electrode. A ferromagnetic Co9Fe layer as a top electrode was deposited over the granular film to form cross pattern junctions of 0.01 mm2 junction area through a metal mask. The tunneling magnetoresistance up to 4.5% at RT was observed for a Co9Fe/Co80Pt20-SiO2/Co 80Pt20/Fe junction at a low field.

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