Spin dependent transport phenomena in the NiFe/AlO/Cu/AlO/NiFe double tunnel junctions

J. Hayakawa, K. Itou, M. Ichimura, A. Sakuma

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this study, in order to develop the highly performable spintronics devices such as three terminal spin devices, we first began to examine the fundamental spin transport properties in the spin-valve type NiFe/AlO/Cu/NiFe/MnIr double junctions, which has never been studied experimentally so far. The samples were grown on SiO2 substrate by magnetron sputtering method. Magnetoresistance effects in the NiFe/AlO/Cu/NiFe/MnIr double junctions was studied at 4.2 K and room temperature.

Original languageEnglish
Title of host publicationIntermag 2003 - Program of the 2003 IEEE International Magnetics Conference
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)0780376471, 9780780376472
DOIs
Publication statusPublished - 2003 Jan 1
Externally publishedYes
Event2003 IEEE International Magnetics Conference, Intermag 2003 - Boston, United States
Duration: 2003 Mar 302003 Apr 3

Publication series

NameIntermag 2003 - Program of the 2003 IEEE International Magnetics Conference

Other

Other2003 IEEE International Magnetics Conference, Intermag 2003
CountryUnited States
CityBoston
Period03/3/3003/4/3

Keywords

  • Artificial intelligence
  • Atmosphere
  • Large Hadron Collider
  • Magnetic devices
  • Magnetic fields
  • Magnetic switching
  • Magnetoelectronics
  • Physics
  • Sputtering
  • Temperature

ASJC Scopus subject areas

  • Engineering(all)

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