Spin-dependent transport mechanisms in CoFe/MgO/n+-Si junctions investigated by frequency response of signals

Tomoaki Inokuchi; Mizue Ishikawa; Hideyuki Sugiyama; Yoshiaki Saito

doi:10.7567/APEX.9.073002

Spin-dependent transport mechanisms in CoFe/MgO/n⁺-Si junctions investigated by frequency response of signals

Tomoaki Inokuchi, Mizue Ishikawa, Hideyuki Sugiyama, Yoshiaki Saito

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We investigated spin-dependent transport properties in CoFe/MgO/n+-Si junctions by measuring Hanle signals and their dependence on the measurement frequency. The CoFe/MgO/n+-Si junctions exhibited two types of Hanle curves with different half-widths. Hanle signals with a broad half-width were observed mainly in the low-bias region, and these signals exhibited apparent frequency dependence and disappeared in the highfrequency region though Hanle signals with narrow half-widths were almost independent of the measurement frequency used in this study. This frequency dependence is explained by the mechanism of two-step tunneling. These results show that investigating the frequency response signals gives clear information on spin-dependent transport mechanisms.

Original language	English
Article number	073002
Journal	Applied Physics Express
Volume	9
Issue number	7
DOIs	https://doi.org/10.7567/APEX.9.073002
Publication status	Published - 2016 Jul
Externally published	Yes

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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title = "Spin-dependent transport mechanisms in CoFe/MgO/n+-Si junctions investigated by frequency response of signals",

abstract = "We investigated spin-dependent transport properties in CoFe/MgO/n+-Si junctions by measuring Hanle signals and their dependence on the measurement frequency. The CoFe/MgO/n+-Si junctions exhibited two types of Hanle curves with different half-widths. Hanle signals with a broad half-width were observed mainly in the low-bias region, and these signals exhibited apparent frequency dependence and disappeared in the highfrequency region though Hanle signals with narrow half-widths were almost independent of the measurement frequency used in this study. This frequency dependence is explained by the mechanism of two-step tunneling. These results show that investigating the frequency response signals gives clear information on spin-dependent transport mechanisms.",

author = "Tomoaki Inokuchi and Mizue Ishikawa and Hideyuki Sugiyama and Yoshiaki Saito",

note = "Funding Information: Acknowledgment This work was partly supported by a Grant-in-Aid for Scientific Research (A) (No. 25246020) from the Japan Society for the Promotion of Science. Publisher Copyright: {\textcopyright} 2016 The Japan Society of Applied Physics.",

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doi = "10.7567/APEX.9.073002",

language = "English",

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journal = "Applied Physics Express",

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AU - Inokuchi, Tomoaki

AU - Ishikawa, Mizue

AU - Sugiyama, Hideyuki

AU - Saito, Yoshiaki

N1 - Funding Information: Acknowledgment This work was partly supported by a Grant-in-Aid for Scientific Research (A) (No. 25246020) from the Japan Society for the Promotion of Science. Publisher Copyright: © 2016 The Japan Society of Applied Physics.

PY - 2016/7

Y1 - 2016/7

N2 - We investigated spin-dependent transport properties in CoFe/MgO/n+-Si junctions by measuring Hanle signals and their dependence on the measurement frequency. The CoFe/MgO/n+-Si junctions exhibited two types of Hanle curves with different half-widths. Hanle signals with a broad half-width were observed mainly in the low-bias region, and these signals exhibited apparent frequency dependence and disappeared in the highfrequency region though Hanle signals with narrow half-widths were almost independent of the measurement frequency used in this study. This frequency dependence is explained by the mechanism of two-step tunneling. These results show that investigating the frequency response signals gives clear information on spin-dependent transport mechanisms.

AB - We investigated spin-dependent transport properties in CoFe/MgO/n+-Si junctions by measuring Hanle signals and their dependence on the measurement frequency. The CoFe/MgO/n+-Si junctions exhibited two types of Hanle curves with different half-widths. Hanle signals with a broad half-width were observed mainly in the low-bias region, and these signals exhibited apparent frequency dependence and disappeared in the highfrequency region though Hanle signals with narrow half-widths were almost independent of the measurement frequency used in this study. This frequency dependence is explained by the mechanism of two-step tunneling. These results show that investigating the frequency response signals gives clear information on spin-dependent transport mechanisms.

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Spin-dependent transport mechanisms in CoFe/MgO/n⁺-Si junctions investigated by frequency response of signals

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