Spin-dependent transport mechanisms in CoFe/MgO/n+-Si junctions investigated by frequency response of signals

Tomoaki Inokuchi, Mizue Ishikawa, Hideyuki Sugiyama, Yoshiaki Saito

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

We investigated spin-dependent transport properties in CoFe/MgO/n+-Si junctions by measuring Hanle signals and their dependence on the measurement frequency. The CoFe/MgO/n+-Si junctions exhibited two types of Hanle curves with different half-widths. Hanle signals with a broad half-width were observed mainly in the low-bias region, and these signals exhibited apparent frequency dependence and disappeared in the highfrequency region though Hanle signals with narrow half-widths were almost independent of the measurement frequency used in this study. This frequency dependence is explained by the mechanism of two-step tunneling. These results show that investigating the frequency response signals gives clear information on spin-dependent transport mechanisms.

Original languageEnglish
Article number073002
JournalApplied Physics Express
Volume9
Issue number7
DOIs
Publication statusPublished - 2016 Jul
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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