Spin-dependent scattering in semiconducting ferromagnetic (Ga,Mn)As trilayer structures

N. Akiba, D. Chiba, K. Nakata, F. Matsukura, Y. Ohno, H. Ohno

Research output: Contribution to journalConference articlepeer-review

22 Citations (Scopus)

Abstract

The spin-dependent scattering in ferromagnet/nonmagnet/ferromagnet (Ga,Mn)As/(Al,Ga)As/ (Ga,Mn)As trilayer structures was studied. An increase of sheet resistance was observed when the magnetizations of the two ferromagnetic (Ga,Mn)As layers were aligned anti-parallel, which was realized by the different coercivity of the two (Ga,Mn)As layers with different compositions. This is the first demonstration of spin-dependent scattering in magnetic multilayer structures made of semiconductor-materials alone.

Original languageEnglish
Pages (from-to)6436-6438
Number of pages3
JournalJournal of Applied Physics
Volume87
Issue number9 III
DOIs
Publication statusPublished - 2000 May 1
Event44th Annual Conference on Magnetism and Magnetic Materials - San Jose, CA, United States
Duration: 1999 Nov 151999 Nov 18

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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