Spin dependence of the interlayer tunneling in double quantum wells in the quantum Hall regime

S. Kishimoto; Y. Ohno; F. Matsukura; H. Ohno

doi:10.1016/S0921-4526(98)00674-7

Spin dependence of the interlayer tunneling in double quantum wells in the quantum Hall regime

S. Kishimoto, Y. Ohno, F. Matsukura, H. Ohno

Research output: Contribution to journal › Article › peer-review

Abstract

We have studied the spin dependence of electron tunneling in GaAs/AlGaAs double quantum wells (DQWs) in the quantum Hall regime. One of the two-dimensional-electron layers (2DELs) is fully spin polarized by tuning a magnetic field while the spin orientation of the topmost Landau level (LL) in the other 2DEL is set in parallel or antiparallel by changing the carrier density. We have evaluated the interlayer tunnel dissipation (ITD) between the edge-channel in the bottom 2DEL and the half-filled LL in the top 2DEL. We observed that when the spin orientations of both layers are in alignment, ITD is enhanced as compared to the antiparallel alignment. The difference is found to disappear when tunnel coupling is reduced.

Original language	English
Pages (from-to)	535-539
Number of pages	5
Journal	Physica B: Condensed Matter
Volume	256-258
DOIs	https://doi.org/10.1016/S0921-4526(98)00674-7
Publication status	Published - 1998 Dec 2

Keywords

Double quantum well
Quantum Hall effect
Tunneling

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/S0921-4526(98)00674-7

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@article{4859d84a25234536a576cd1ac1698fd7,

title = "Spin dependence of the interlayer tunneling in double quantum wells in the quantum Hall regime",

abstract = "We have studied the spin dependence of electron tunneling in GaAs/AlGaAs double quantum wells (DQWs) in the quantum Hall regime. One of the two-dimensional-electron layers (2DELs) is fully spin polarized by tuning a magnetic field while the spin orientation of the topmost Landau level (LL) in the other 2DEL is set in parallel or antiparallel by changing the carrier density. We have evaluated the interlayer tunnel dissipation (ITD) between the edge-channel in the bottom 2DEL and the half-filled LL in the top 2DEL. We observed that when the spin orientations of both layers are in alignment, ITD is enhanced as compared to the antiparallel alignment. The difference is found to disappear when tunnel coupling is reduced.",

keywords = "Double quantum well, Quantum Hall effect, Tunneling",

author = "S. Kishimoto and Y. Ohno and F. Matsukura and H. Ohno",

note = "Funding Information: This work is partly supported by Grant-in-Aids for Scientific Research (Grant No. 09244103: Priority Area `Spin-Controlled Semiconductor Nanostructures' and Grant No. 09750004) from the Ministry of Education, Science, Sports, and Culture, Japan.",

year = "1998",

month = dec,

day = "2",

doi = "10.1016/S0921-4526(98)00674-7",

language = "English",

volume = "256-258",

pages = "535--539",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier",

}

TY - JOUR

T1 - Spin dependence of the interlayer tunneling in double quantum wells in the quantum Hall regime

AU - Kishimoto, S.

AU - Ohno, Y.

AU - Matsukura, F.

AU - Ohno, H.

N1 - Funding Information: This work is partly supported by Grant-in-Aids for Scientific Research (Grant No. 09244103: Priority Area `Spin-Controlled Semiconductor Nanostructures' and Grant No. 09750004) from the Ministry of Education, Science, Sports, and Culture, Japan.

PY - 1998/12/2

Y1 - 1998/12/2

N2 - We have studied the spin dependence of electron tunneling in GaAs/AlGaAs double quantum wells (DQWs) in the quantum Hall regime. One of the two-dimensional-electron layers (2DELs) is fully spin polarized by tuning a magnetic field while the spin orientation of the topmost Landau level (LL) in the other 2DEL is set in parallel or antiparallel by changing the carrier density. We have evaluated the interlayer tunnel dissipation (ITD) between the edge-channel in the bottom 2DEL and the half-filled LL in the top 2DEL. We observed that when the spin orientations of both layers are in alignment, ITD is enhanced as compared to the antiparallel alignment. The difference is found to disappear when tunnel coupling is reduced.

AB - We have studied the spin dependence of electron tunneling in GaAs/AlGaAs double quantum wells (DQWs) in the quantum Hall regime. One of the two-dimensional-electron layers (2DELs) is fully spin polarized by tuning a magnetic field while the spin orientation of the topmost Landau level (LL) in the other 2DEL is set in parallel or antiparallel by changing the carrier density. We have evaluated the interlayer tunnel dissipation (ITD) between the edge-channel in the bottom 2DEL and the half-filled LL in the top 2DEL. We observed that when the spin orientations of both layers are in alignment, ITD is enhanced as compared to the antiparallel alignment. The difference is found to disappear when tunnel coupling is reduced.

KW - Double quantum well

KW - Quantum Hall effect

KW - Tunneling

UR - http://www.scopus.com/inward/record.url?scp=18544407716&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=18544407716&partnerID=8YFLogxK

U2 - 10.1016/S0921-4526(98)00674-7

DO - 10.1016/S0921-4526(98)00674-7

M3 - Article

AN - SCOPUS:18544407716

VL - 256-258

SP - 535

EP - 539

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

SN - 0921-4526

ER -

Spin dependence of the interlayer tunneling in double quantum wells in the quantum Hall regime

Abstract

Keywords

ASJC Scopus subject areas

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