Abstract
We have studied the spin dependence of electron tunneling in GaAs/AlGaAs double quantum wells (DQWs) in the quantum Hall regime. One of the two-dimensional-electron layers (2DELs) is fully spin polarized by tuning a magnetic field while the spin orientation of the topmost Landau level (LL) in the other 2DEL is set in parallel or antiparallel by changing the carrier density. We have evaluated the interlayer tunnel dissipation (ITD) between the edge-channel in the bottom 2DEL and the half-filled LL in the top 2DEL. We observed that when the spin orientations of both layers are in alignment, ITD is enhanced as compared to the antiparallel alignment. The difference is found to disappear when tunnel coupling is reduced.
| Original language | English |
|---|---|
| Pages (from-to) | 535-539 |
| Number of pages | 5 |
| Journal | Physica B: Condensed Matter |
| Volume | 256-258 |
| DOIs | |
| Publication status | Published - 1998 Dec 2 |
Keywords
- Double quantum well
- Quantum Hall effect
- Tunneling
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
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Kishimoto, S., Ohno, Y., Matsukura, F., & Ohno, H. (1998). Spin dependence of the interlayer tunneling in double quantum wells in the quantum Hall regime. Physica B: Condensed Matter, 256-258, 535-539. https://doi.org/10.1016/S0921-4526(98)00674-7