Spin degree of freedom in ferromagnetic semiconductor heterostructures

F. Matsukura, D. Chiba, Y. Ohno, T. Dietl, H. Ohno

Research output: Contribution to journalConference articlepeer-review

8 Citations (Scopus)

Abstract

Ferromagnetic III-V semiconductors, such as (Ga,Mn)As and (In,Mn)As, are among the promising materials in the field of semiconductor spintronics because of their good compatibility with the high quality III-V heterostructures. We show several examples of the novel spin-related properties of heterostructures containing a ferromagnetic component: (1) all-semiconductor (Ga,Mn)As/(Al,Ga)As/(Ga,Mn)As trilayers exhibiting spin-dependent scattering and tunneling magnetoresistance; (2) resonant tunneling structures with (Ga,Mn)As emitter, where spontaneous spin-splitting of the valence band is probed; (3) spin-light emitting diodes, in which spin-injection can be observed and (4) field effect transistor structures with a (In,Mn)As channel layer, making it possible to control the ferromagnetism by an electric field.

Original languageEnglish
Pages (from-to)104-110
Number of pages7
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume16
Issue number1
DOIs
Publication statusPublished - 2003 Jan 1
EventProceedingsof the Twelfth International Winterschool on New - Mauterndorf, Austria
Duration: 2002 Feb 252002 Mar 1

Keywords

  • Control of ferromagnetism
  • Ferromagnetic semiconductor
  • Magnetoresistance
  • Spin-injection
  • Spintronics

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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