We demonstrate that spin polarization and valley polarization have quantitatively similar effects on the resistivity of a two-dimensional electron gas in a silicon-on-insulator quantum well. In so doing, we also examine the dependence on disorder, leading to a coarse but global phenomenology of how the resistivity depends on its key parameters: spin and valley polarization, density, disorder, and temperature.
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|Publication status||Published - 2013 Nov 4|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics