Spin accumulation and transport signals in CoFe/MgO/Si devices with confined structure of n+-Si layer

Y. Saito, T. Inokuchi, M. Ishikawa, T. Ajay, H. Sugiyama

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

Observation of the spin signals in devices with low interface resistance of ferromagnetic/semiconductor junctions is one of the most important issues from the application view point. We demonstrate spin transport and accumulation signals in highly doped ∼1×1020 cm-3 n+-Si by using CoFe/MgO/n+-Si (10 nm, 20 nm)/n-Si devices. The highly doped n+-Si was confined within a thin n+-Si layer (10 nm and 20 nm in thickness). In this confined structure, we observed the spin accumulation signals for the devices with impurity concentration of ∼1×1020 cm-3 and the spin transport signals for the devices with ∼1 kΩμm2 interface resistance. This indicates that the n+ confined structure is important for observing and increasing spin signals in the low-interface-resistance region.

Original languageEnglish
Article number055937
JournalAIP Advances
Volume7
Issue number5
DOIs
Publication statusPublished - 2017 May 1
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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