Spin accumulation and decay in magnetic Schottky barriers

Gerrit E.W. Bauer, Yaroslav Tserkovnyak, Arne Brataas, Jun Ren, Ke Xia, Maciej Zwierzycki, Paul J. Kelly

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)

Abstract

The theory of charge and spin transport in forward-biased Schottky barriers reveals characteristic and experimentally relevant features. The conductivity mismatch is found to enhance the current-induced spin imbalance in the semiconductor. The GaAs MnAs interface resistance is obtained from an analysis of the magnetic-field-dependent Kerr rotation experiments by Stephens and compared with first-principles calculations for intrinsic interfaces. With increasing current bias, the interface transparency grows toward the theoretical values, reflecting increasingly efficient Schottky barrier screening.

Original languageEnglish
Article number155304
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume72
Issue number15
DOIs
Publication statusPublished - 2005 Oct 15
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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