Spectroscopic observation of the interface states at the SiO2/4H-SiC(0001) interface

Yoshiyuki Yamashita, Takahiro Nagata, Toyohiro Chikyow, Ryu Hasunuma, Kikuo Yamabe

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We obtained the energy distribution of the interface states at the SiO2/4H-SiC(0001) interface using operando hard x-ray photoelectron spectroscopy. Two types of interface states were observed: one with continuous interface states in the entire SiC band-gap and the other with sharp interface states formed below the conduction band minimum (CBM). The continuous interface states in the whole gap were attributed to carbon clusters while the sharp interface states observed near the CBM were due to the Si2−C=O state and/or the Si2−C=C−Si2 state at the SiO2/SiC interface.

Original languageEnglish
Pages (from-to)56-60
Number of pages5
Journale-Journal of Surface Science and Nanotechnology
Volume17
DOIs
Publication statusPublished - 2019 Jul 4

Keywords

  • Semiconductor-insulator interfaces
  • Silicon carbide
  • Synchrotron radiation photoelectron spectroscopy

ASJC Scopus subject areas

  • Biotechnology
  • Bioengineering
  • Condensed Matter Physics
  • Mechanics of Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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