Spectral narrowing effect of a novel super-grating dual-gate structure for plasmon-resonant terahertz emitter

Takuya Nishiura, Nobuhiro Magome, Hyunchul Kang, Taiichi Otsuji

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

We have proposed a terahertz (THz) emitter utilizing two-dimensional plasmons (2DPs) in a super-grating dual-gate (SGG) high electron mobility transistor (HEMT). The plasmon under each grating gate has a unique feature that its resonant frequency is determined by the plasma-wave velocity over the gate length. Since the drain bias voltage causes a linear potential slope from the source to drain area, the sheet electron densities in periodically distributed 2DP cavities are dispersed. As a result, all the resonant frequencies are dispersed and undesirable spectral broadening occurs. A SGG structure can compensate for the sheet electron density distribution by modulating the grating dimension. The finite difference time domain simulation confirms its spectral narrowing effect. Within a wide detuning range for the gate and drain bias voltages giving a frequency shifting of ±0.5 THz from an optimum condition, the SGG structure can preserve the spectral narrowing effect.

Original languageEnglish
Pages (from-to)696-701
Number of pages6
JournalIEICE Transactions on Electronics
VolumeE92-C
Issue number5
DOIs
Publication statusPublished - 2009 Jan 1

Keywords

  • Dispersion control
  • Emitter
  • Grating dimension
  • Plasmon resonance
  • Terahertz

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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