Specific structural factors influencing on reliability of CVD-HfO2

Yoshinao Harada, Masaaki Niwa, Sungjoo Lee, Dim Lee Kwong

Research output: Contribution to conferencePaper

25 Citations (Scopus)

Abstract

We report on two key issues for CVD-HfO2 gate dielectric which influence on their reliability. The first ones are extrinsic defects, i.e., 1) two types of extrinsic defects which lead to a large electrical leakage. The other ones are interfaces inside the film, i.e., 2) stoichiometric interface due to a Si out-diffusion from substrate and 3) interface defined by dielectric constant transition which was formed by a diffusion mechanism of Si into HfO2. Lower Weibull slope β is mainly determined by a distance from Si substrate to the k-transition interface. Although the β becomes smaller due to the k-transition interface, it was clarified to be improved by a single layered silicate without k-transition interface.

Original languageEnglish
Pages26-27
Number of pages2
Publication statusPublished - 2002 Jan 1
Externally publishedYes
Event2002 Symposium on VLSI Technology Digest of Technical Papers - Honolulu, HI, United States
Duration: 2002 Jun 112002 Jun 13

Other

Other2002 Symposium on VLSI Technology Digest of Technical Papers
CountryUnited States
CityHonolulu, HI
Period02/6/1102/6/13

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Harada, Y., Niwa, M., Lee, S., & Kwong, D. L. (2002). Specific structural factors influencing on reliability of CVD-HfO2. 26-27. Paper presented at 2002 Symposium on VLSI Technology Digest of Technical Papers, Honolulu, HI, United States.