Spatio-time-resolved cathodoluminescence studies on the Si-doping effects in high AlN mole fraction AlxGa1-xN multiple quantum wells grown on an AlN template by metalorganic vapor phase epitaxy

S. F. Chichibu, Y. Ishikawa, K. Furusawa, H. Miyake, K. Hiramatsu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In order to understand the reason why doping with Si in the wells enhanced the NBE emission efficiency, STRCL measurements and 1D-SCSP calculations were carried out on the Al0.68Ga0.32N / Al0.77Ga0.23N MQWs with different Si-doped layers. The increase in τNR, i.e decrease in the concentration of NRCs, by the Si-doping in the wells were correlated with improved lateral uniformity of the QW transition energy, which is most likely caused by the increase in the terrace width during the growth. The results suggest the importance of H3SiNH2 doping-reactant formation that provides wetting conditions thanks to the surface Si-N bonds and simultaneously gives rise to enhanced decomposition of NH3, both of which lower the total energy and reduce the concentration of NRCs composed of cation vacancies.

Original languageEnglish
Title of host publication15th International Workshop on Junction Technology, IWJT 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages29-33
Number of pages5
ISBN (Electronic)9784863485174
DOIs
Publication statusPublished - 2016 May 9
Event15th International Workshop on Junction Technology, IWJT 2015 - Kyoto, Japan
Duration: 2015 Jun 112015 Jun 12

Publication series

Name15th International Workshop on Junction Technology, IWJT 2015

Other

Other15th International Workshop on Junction Technology, IWJT 2015
CountryJapan
CityKyoto
Period15/6/1115/6/12

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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