Spatial resolution of imaging contaminations on the GaAs surface by scanning tunneling microscope-cathodoluminescence spectroscopy

Kentaro Watanabe; Yoshiaki Nakamura; Masakazu Ichikawa

doi:10.1016/j.apsusc.2008.02.013

Spatial resolution of imaging contaminations on the GaAs surface by scanning tunneling microscope-cathodoluminescence spectroscopy

Kentaro Watanabe, Yoshiaki Nakamura, Masakazu Ichikawa

Advanced Institute for Materials Research (AIMR)

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

We obtained the luminescence image of the GaAs (1 1 0) surface by scanning tunneling microscope-cathodoluminescence (STM-CL) spectroscopy, where low-energy (∼100 eV) electrons field emitted from the STM tip were used as a bright excitation source. The STM-CL image with high photon signal (1.25 × 10 ⁴ cps) showed the dark image corresponding to the surface contamination in the STM image working as the nonradiative recombination centers of carriers. This dark image demonstrated the spatial resolution of about 100 nm in STM-CL spectroscopy of the GaAs (1 1 0) surface, which was determined by the field-emitted electron beam diameter.

Original language	English
Pages (from-to)	7737-7741
Number of pages	5
Journal	Applied Surface Science
Volume	254
Issue number	23
DOIs	https://doi.org/10.1016/j.apsusc.2008.02.013
Publication status	Published - 2008 Sep 30

Keywords

Cathodoluminescence
Field emission
GaAs
Scanning tunneling microscopy

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1016/j.apsusc.2008.02.013

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title = "Spatial resolution of imaging contaminations on the GaAs surface by scanning tunneling microscope-cathodoluminescence spectroscopy",

abstract = " We obtained the luminescence image of the GaAs (1 1 0) surface by scanning tunneling microscope-cathodoluminescence (STM-CL) spectroscopy, where low-energy (∼100 eV) electrons field emitted from the STM tip were used as a bright excitation source. The STM-CL image with high photon signal (1.25 × 10 4 cps) showed the dark image corresponding to the surface contamination in the STM image working as the nonradiative recombination centers of carriers. This dark image demonstrated the spatial resolution of about 100 nm in STM-CL spectroscopy of the GaAs (1 1 0) surface, which was determined by the field-emitted electron beam diameter.",

keywords = "Cathodoluminescence, Field emission, GaAs, Scanning tunneling microscopy",

author = "Kentaro Watanabe and Yoshiaki Nakamura and Masakazu Ichikawa",

year = "2008",

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doi = "10.1016/j.apsusc.2008.02.013",

language = "English",

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pages = "7737--7741",

journal = "Applied Surface Science",

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T1 - Spatial resolution of imaging contaminations on the GaAs surface by scanning tunneling microscope-cathodoluminescence spectroscopy

AU - Watanabe, Kentaro

AU - Nakamura, Yoshiaki

AU - Ichikawa, Masakazu

PY - 2008/9/30

Y1 - 2008/9/30

N2 - We obtained the luminescence image of the GaAs (1 1 0) surface by scanning tunneling microscope-cathodoluminescence (STM-CL) spectroscopy, where low-energy (∼100 eV) electrons field emitted from the STM tip were used as a bright excitation source. The STM-CL image with high photon signal (1.25 × 10 4 cps) showed the dark image corresponding to the surface contamination in the STM image working as the nonradiative recombination centers of carriers. This dark image demonstrated the spatial resolution of about 100 nm in STM-CL spectroscopy of the GaAs (1 1 0) surface, which was determined by the field-emitted electron beam diameter.

AB - We obtained the luminescence image of the GaAs (1 1 0) surface by scanning tunneling microscope-cathodoluminescence (STM-CL) spectroscopy, where low-energy (∼100 eV) electrons field emitted from the STM tip were used as a bright excitation source. The STM-CL image with high photon signal (1.25 × 10 4 cps) showed the dark image corresponding to the surface contamination in the STM image working as the nonradiative recombination centers of carriers. This dark image demonstrated the spatial resolution of about 100 nm in STM-CL spectroscopy of the GaAs (1 1 0) surface, which was determined by the field-emitted electron beam diameter.

KW - Cathodoluminescence

KW - Field emission

KW - GaAs

KW - Scanning tunneling microscopy

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DO - 10.1016/j.apsusc.2008.02.013

M3 - Article

AN - SCOPUS:51249108890

VL - 254

SP - 7737

EP - 7741

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

IS - 23

ER -

Spatial resolution of imaging contaminations on the GaAs surface by scanning tunneling microscope-cathodoluminescence spectroscopy

Abstract

Keywords

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