Spatial redistribution of oxygen ions in oxide resistance switching device after forming process

Takeshi Yajima, Kohei Fujiwara, Aiko Nakao, Tomohiro Kobayashi, Toshiyuki Tanaka, Kei Sunouchi, Yoshiaki Suzuki, Mai Takeda, Kentaro Kojima, Yoshinobu Nakamura, Kouji Taniguchi, Hidenori Takagi

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The change in the spatial distribution of oxygen ions after an initial voltage application called the forming process was investigated for oxide resistance switching devices by secondary ion mass spectrometry mapping. To track the motion of oxygen ions, tracer 18O ions were implanted in a planar Pt/CuO/Pt device. We found clear evidence for the oxygen reduction in the conductive bridge structure formed between two electrodes. In addition, the oxygen ions in the bridge structure drift to the anode, implying the oxygen diffusion (migration) induced by high electric field and/or current density. We discuss those results in terms of a filament model.

Original languageEnglish
Pages (from-to)602151-602153
Number of pages3
JournalJapanese journal of applied physics
Volume49
Issue number6 PART 1
DOIs
Publication statusPublished - 2010 Jun 1
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Spatial redistribution of oxygen ions in oxide resistance switching device after forming process'. Together they form a unique fingerprint.

  • Cite this

    Yajima, T., Fujiwara, K., Nakao, A., Kobayashi, T., Tanaka, T., Sunouchi, K., Suzuki, Y., Takeda, M., Kojima, K., Nakamura, Y., Taniguchi, K., & Takagi, H. (2010). Spatial redistribution of oxygen ions in oxide resistance switching device after forming process. Japanese journal of applied physics, 49(6 PART 1), 602151-602153. https://doi.org/10.1143/JJAP.49.060215