Spatial distribution of state densities dominating strain sensitivity of carbon nanotubes

Masato Ohnishi, Ken Suzuki, Hideo Miura

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In any electronic devices and sensors, internal strain is induced because of the thermal change or the lattice mismatch between different materials. It is, therefore, expected that when carbon nanotubes (CNTs) are used for electronic devices, their electronic properties are changed caused by the deformation. In this study, we study the mechanism of the change in the band gap of CNTs under the radial strain in terms of state density distribution. We found that the spatial distribution of the state density dominates its strain sensitivity, and thus, the strain sensitivity of electronic properties of CNTs. We also calculated the change in the current through the deformed CNTs. The founding indicates that the state density analysis should be useful for the development of novel electronic devices and nano electro mechanical systems and for assuring their reliable performance.

Original languageEnglish
Title of host publicationInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages165-168
Number of pages4
ISBN (Electronic)9781479952885
DOIs
Publication statusPublished - 2014 Oct 20
Event2014 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2014 - Yokohama, Japan
Duration: 2014 Sep 92014 Sep 11

Publication series

NameInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Other

Other2014 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2014
CountryJapan
CityYokohama
Period14/9/914/9/11

Keywords

  • carbon nanotube
  • electronic state
  • state density
  • strain

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Computer Science Applications
  • Modelling and Simulation

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