TY - GEN
T1 - Spatial distribution of state densities dominating strain sensitivity of carbon nanotubes
AU - Ohnishi, Masato
AU - Suzuki, Ken
AU - Miura, Hideo
N1 - Publisher Copyright:
© 2014 IEEE.
Copyright:
Copyright 2015 Elsevier B.V., All rights reserved.
PY - 2014/10/20
Y1 - 2014/10/20
N2 - In any electronic devices and sensors, internal strain is induced because of the thermal change or the lattice mismatch between different materials. It is, therefore, expected that when carbon nanotubes (CNTs) are used for electronic devices, their electronic properties are changed caused by the deformation. In this study, we study the mechanism of the change in the band gap of CNTs under the radial strain in terms of state density distribution. We found that the spatial distribution of the state density dominates its strain sensitivity, and thus, the strain sensitivity of electronic properties of CNTs. We also calculated the change in the current through the deformed CNTs. The founding indicates that the state density analysis should be useful for the development of novel electronic devices and nano electro mechanical systems and for assuring their reliable performance.
AB - In any electronic devices and sensors, internal strain is induced because of the thermal change or the lattice mismatch between different materials. It is, therefore, expected that when carbon nanotubes (CNTs) are used for electronic devices, their electronic properties are changed caused by the deformation. In this study, we study the mechanism of the change in the band gap of CNTs under the radial strain in terms of state density distribution. We found that the spatial distribution of the state density dominates its strain sensitivity, and thus, the strain sensitivity of electronic properties of CNTs. We also calculated the change in the current through the deformed CNTs. The founding indicates that the state density analysis should be useful for the development of novel electronic devices and nano electro mechanical systems and for assuring their reliable performance.
KW - carbon nanotube
KW - electronic state
KW - state density
KW - strain
UR - http://www.scopus.com/inward/record.url?scp=84908687337&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84908687337&partnerID=8YFLogxK
U2 - 10.1109/SISPAD.2014.6931589
DO - 10.1109/SISPAD.2014.6931589
M3 - Conference contribution
AN - SCOPUS:84908687337
T3 - International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
SP - 165
EP - 168
BT - International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2014 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2014
Y2 - 9 September 2014 through 11 September 2014
ER -