Spatial distribution of composion and strain in multicrystalline SiGe bulk crystal and their impact on solar cell applications

Noritaka Usami, Tatsuya Takahashi, Arnold C. Alguno, Kozo Fujiwara, Toru Ujihara, Tetsu Ichitsubo, Gen Sazaki, Kazuo Nakajima

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report on microscopic structural characterizations of multicrystalline SiGe (mc-SiGe) bulk crystal, which contains microscopic compositional distribution, and discuss possible influence on solar cell applications. By combining microscopic Raman spectroscopy and energy-dispersive x-ray analysis, the existence of built-in strain and its spatial distribution were experimentally obtained. By a simple calculation assuming ellipsoidal SiGe inclusion coherently embedded in Si-matrix, effect of the built-in strain on the band gap is quantitatively estimated. For example, an ellipsoidal Si 0.5Ge0.5 inclusion with an aspect ratio less than 0.10 is predicted to have the similar band gap with unstrained Ge. Therefore, to utilize strain is concluded to be important to realize spectroscopic response in the near infrared regime with minimizing incorporation of Ge.

Original languageEnglish
Title of host publicationProceddings of the 3rd World Conference on Photovoltaic Energy Conversion
EditorsK. Kurokawa, L.L. Kazmerski, B. McNeils, M. Yamaguchi, C. Wronski
Pages98-101
Number of pages4
Publication statusPublished - 2003 Dec 1
EventProceddings of the 3rd World Conference on Photovoltaic Energy Conversion - Osaka, Japan
Duration: 2003 May 112003 May 18

Publication series

NameProceedings of the 3rd World Conference on Photovoltaic Energy Conversion
VolumeA

Other

OtherProceddings of the 3rd World Conference on Photovoltaic Energy Conversion
Country/TerritoryJapan
CityOsaka
Period03/5/1103/5/18

ASJC Scopus subject areas

  • Engineering(all)

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