Source/Drain Contact Resistance of Silicided Thin-Film SOI MOSFET’s

Kunihiro Suzuki, Tetsu Tanaka, Yoshiharu Tosaka, Toshihiro Sugii, Satoshi Andoh

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)

Abstract

We developed a source/drain contact (S/D) resistance model for silicided thin-film SOI MOSFET’s, and analyzed its dependence on device parameters considering the variation in the thickness of the silicide and residual SOI layers due to silicidation. The S/D resistance is insensitive to the silicide thickness over a wide range of thicknesses; however, it increases significantly when the silicide thickness is less than one hundredth of initial SOI thickness, and when almost all the SOI layer is silicided. To obtain a low S/D resistance, the specific contact resistance must be reduced, that is, the doping concentration at the silicide-SOI interface must be more than 102() cm-3.

Original languageEnglish
Pages (from-to)1007-1012
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume41
Issue number6
DOIs
Publication statusPublished - 1994 Jan 1
Externally publishedYes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Source/Drain Contact Resistance of Silicided Thin-Film SOI MOSFET’s'. Together they form a unique fingerprint.

Cite this